MMBT2907ALT1 Purpose Transistors Datasheet

MMBT2907ALT1 Datasheet, PDF, Equivalent


Part Number

MMBT2907ALT1

Description

General Purpose Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBT2907ALT1 Datasheet


MMBT2907ALT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2907LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
MMBT2907LT1
MMBT2907ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
VCEO
VCBO
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F
2
EMITTER
2907
2907A
–40 –60
–60
–5.0
–600
Unit
Vdc
Vdc
Vdc
mAdc
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
(VCB = –50 Vdc, IE = 0, TA = 125°C)
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBT2907
MMBT2907A
IB
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
–40 —
–60 —
–60 — Vdc
–5.0 —
Vdc
— –50 nAdc
µAdc
— –0.020
— –0.010
— –20
— –10
— –50 nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT2907ALT1
MMBT2907LT1 MMBT2907ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
hFE —
MMBT2907
35 —
MMBT2907A
75 —
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
50 —
100 —
(IC = –10 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
75 —
100 —
(IC = –150 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
——
100 300
(IC = –500 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
30 —
50 —
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
Vdc
–0.4
–1.6
Vdc
–1.3
–2.6
Current – Gain — Bandwidth Product (3),(4)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
fT MHz
200 —
Cobo
pF
— 8.0
Cibo
pF
— 30
Turn–On Time
Delay Time
Rise Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
Turn–Off Time
Storage Time
Fall Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
ton — 45
td — 10 ns
tr — 40
toff — 100
ts — 80 ns
tf — 30
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
0
–16 V
1.0 k
50
–30 V
200
TO OSCILLOSCOPE
RISE TIME 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
+15 V –6.0 V
1.0 k 37
0
–30 V
1.0 k
50
1N916
TO OSCILLOSCOPE
RISE TIME 5.0 ns
200 ns
Figure 2. Storage and Fall Time Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2907LT1/D G eneral Purpose Transistors PNP Silicon 1 BASE COLLECTOR 3 MMBT2907LT1 MMBT29 07ALT1* *Motorola Preferred Device MAX IMUM RATINGS Rating Collector – Emitt er Voltage Collector – Base Voltage E mitter – Base Voltage Collector Curre nt — Continuous Symbol VCEO VCBO VEBO IC 2907 –40 –60 –5.0 –600 2 E MITTER 1 3 2907A –60 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 S OT– 23 (TO – 236AB) THERMAL CHARAC TERISTICS Characteristic Total Device D issipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissip ation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storag e Temperature Symbol PD Max 225 1.8 RqJ A PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/ C °C/W °C DEVICE MARKING MMBT2907LT 1 = M2B; MMBT2907ALT1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteri.
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