MMBT2907AWT1G, NSVMMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpo...
MMBT2907AWT1G, NSVMMBT2907AWT1G
General Purpose
Transistor
PNP Silicon
These
transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
−60 −60 −5.0 −600
Vdc Vdc Vdc mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA TJ, Tstg
150
833 −55 to +150
mW
°C/W °C
Stresses exceeding those listed in the ...