PNP Silicon. MMBT2907AWT1G Datasheet


MMBT2907AWT1G Silicon. Datasheet pdf. Equivalent


MMBT2907AWT1G


General Purpose Transistor PNP Silicon
MMBT2907AWT1G, NSVMMBT2907AWT1G

General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 package which is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS

VCEO VCBO VEBO
IC

−60 −60 −5.0 −600

Vdc Vdc Vdc mAdc

Characteristic

Symbol Max

Unit

Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature

PD
RqJA TJ, Tstg

150
833 −55 to +150

mW
°C/W °C

Stresses exceeding those listed in the ...



MMBT2907AWT1G
MMBT2907AWT1G,
NSVMMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−60
−60
−5.0
−600
Vdc
Vdc
Vdc
mAdc
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
150
833
−55 to
+150
mW
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC −70/SOT− 323
CASE 419 −04
STYLE 3
MARKING DIAGRAM
20 MG
G
1
20 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package Shipping
MMBT2907AWT1G
SC−70 3000 Tape &
(Pb−Free)
Reel
NSVMMBT2907AWT1G SC−70 3000 Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 8
1
Publication Order Number:
MMBT2907AWT1/D

MMBT2907AWT1G
MMBT2907AWT1G, NSVMMBT2907AWT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
Vdc
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
−60
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Base Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
IBL − −50 nAdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ON CHARACTERISTICS(3)
ICEX
− −50 nAdc
DC Current Gain (Note 2)
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
HFE
75
100 −
100 −
100 340
50 −
Collector −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
Base −Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
Vdc
−0.4
−1.6
Vdc
−1.3
−2.6
Current −Gain − Bandwidth Product
(IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT 200 − MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo − 8.0 pF
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo − 30 pF
SWITCHING CHARACTERISTICS
Turn−On Time
Delay Time
Rise Time
Storage Time
Fall Time
Turn−Off Time
(VCC = −30 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = 15 mAdc)
ton − 45
td − 10
tr − 40
ns
ts − 80
tf − 30
toff − 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
0
-16 V
1.0 k
50
-30 V
200
TO OSCILLOSCOPE
RISE TIME 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
0
-30 V
+15 V -6.0 V
1.0 k 37
1.0 k
50
1N916
TO OSCILLOSCOPE
RISE TIME 5.0 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
200 ns
Figure 2. Storage and Fall Time Test Circuit
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2




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