MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT2907LT1/D
General Purpose Transistors
PNP Silicon
1 ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT2907LT1/D
General Purpose
Transistors
PNP Silicon
1 BASE
COLLECTOR 3
MMBT2907LT1 MMBT2907ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2907 –40 –60 –5.0 –600
2 EMITTER
1
3
2907A –60
Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 125°C) Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ...