MMBT3416LT3 AmplifierNPN Silicon Datasheet

MMBT3416LT3 Datasheet, PDF, Equivalent


Part Number

MMBT3416LT3

Description

General Purpose Amplifier(NPN Silicon)

Manufacture

ON

Total Page 8 Pages
Datasheet
Download MMBT3416LT3 Datasheet


MMBT3416LT3
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT3416LT3/D
General Purpose Amplifier
NPN Silicon
COLLECTOR
3
MMBT3416LT3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3416LT3 = GP
Symbol
VCEO
VEBO
IC
Value
40
4.0
100
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICBO1
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
40 — Vdc
4.0 — Vdc
— 100 nAdc
— 100 nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1998
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT3416LT3
MMBT3416LT3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 4.5 Vdc)
Collector – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 50 mAdc, IB = 3.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Collector Cutoff Current
(VCB = 18 Vdc, TA = 100°C)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz)
Symbol
hFE
VCE(sat)
VBE(sat)
ICBO2
hFE
Min
75
0.6
75
Max Unit
225 —
0.3 Vdc
1.3 Vdc
15 µAdc
——
EQUIVALENT SWITCHING TIME TEST CIRCUITS
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+ 3.0 V
+10.9 V
10 k
275
10 < t1 < 500 µs
DUTY CYCLE = 2%
0
t1
CS < 4.0 pF*
– 9.1 V
+10.9 V
10 k
< 1.0 ns 1N916
+ 3.0 V
275
CS < 4.0 pF*
Figure 1. Turn–On Time
*Total shunt capacitance of test jig and connectors
Figure 2. Turn–Off Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3416LT3/D G eneral Purpose Amplifier NPN Silicon CO LLECTOR 3 1 BASE MMBT3416LT3 3 1 2 EM ITTER 2 CASE 318 – 08, STYLE 6 SOT 23 (TO – 236AB) MAXIMUM RATINGS R ating Collector – Emitter Voltage Emi tter – Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Val ue 40 4.0 100 Unit Vdc Vdc mAdc THERMA L CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resi stance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resis tance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1 .8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 41 7 – 55 to +150 Unit mW mW/°C °C/W m W mW/°C °C/W °C DEVICE MARKING MMBT 3416LT3 = GP ELECTRICAL CHARACTERISTIC S (TA = 25°C unless otherwise noted) C haracteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter – B.
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