MMBT3640 Switching Transistor Datasheet

MMBT3640 Datasheet, PDF, Equivalent


Part Number

MMBT3640

Description

PNP Switching Transistor

Manufacture

Fairchild

Total Page 5 Pages
Datasheet
Download MMBT3640 Datasheet


MMBT3640
March 2014
MMBT3640
PNP Switching Amplifier
Description
This device is designed for very high-speed saturated
switching at collector currents to 100 mA. Sourced
from process 65.
Ordering Information
Part Number
MMBT3640
Marking
2J
C
SOT-23
Mark: 2J
E
B
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TJ , TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction and Storage Temperature Range
Value
-12
-12
-4
-200
-55 to +150
Unit
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJA
Total Device Dissipation
Derate Above TA = 25°C
Thermal Resistance, Junction to Ambient
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Max.
225
1.8
556
Unit
mW
mW/°C
°C/W
© 2001 Fairchild Semiconductor Corporation
MMBT3640 Rev. 1.1.0
1
www.fairchildsemi.com

MMBT3640
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
IB
hFE
VCE(sat)
VBE(sat)
fT
Cob
Cib
td
tr
ts
tf
ton
toff
Parameter
Conditions
Collector-Emitter Breakdown
Voltage(4)
IC = -10 mA, IB = 0
Collector-Emitter Breakdown Voltage IC = -100 μA, VBE = 0
Collector-Base Breakdown Voltage IC = -100 μA, IE = 0
Emitter-Base Breakdown Voltage
IE = -100 μA, IC = 0
Collector Cut-Off Current
VCE = -6.0 V, VBE = 0
VCE = -6.0 V, VBE = 0,
TA = 65°C
Base Current
VCE = -6.0 V, VBE = 0
DC Current Gain(4)
IC = -10 mA, VCE = -0.3 V
IC = -50 mA, VCE = -1.0 V
IC = -10 mA, IB = -0.5 mA
Collector-Emitter Saturation
Voltage(4)
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA,
TA = 65°C
Base-Emitter Saturation Voltage(4)
IC = -10 mA, IB = -0.5 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
Current Gain - Bandwidth Product
IC = -10 mA, VCE = -5.0 V,
f = 100 MHz
Output Capacitance
VCB = -5.0 V, IE = 0,
f = 1.0 MHz
Input Capacitance
VEB = -0.5 V, IC = 0,
f = 1.0 MHz
Delay Time
Rise Time
VCC = -6 V, VBE(off) = -1.9 V,
IC = -50 mA, IB1 = -5.0 mA
Storage Time
Fall Time
VCC = -6 V, IC = -50 mA,
IB1 = IB2 = -5.0 mA
Turn-On Time
Turn-Off Time
VCC = -6 V, VBE(off) = -1.9 V,
IC = -50 mA, IB1 = -5.0 mA
VCC = -1.5 V, IC = -10 mA,
IB1 = IB2 = -0.5 mA
VCC = -6 V, VBE(off) = -1.9 V,
IC = -50 mA, IB1 = -5.0 mA
VCC = -1.5 V, IC = -10 mA,
IB1 = IB2 = -0.5 mA
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Min.
-12
-12
-12
-4.0
30
20
-0.75
-0.80
500
Max.
-0.01
-1.00
-10
120
-0.30
-0.20
-0.60
-0.25
-0.95
-1.00
-1.50
3.5
3.5
10
30
20
12
25
60
35
75
Unit
V
V
V
V
μA
nA
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
© 2001 Fairchild Semiconductor Corporation
MMBT3640 Rev. 1.1.0
2
www.fairchildsemi.com


Features MMBT3640 — PNP Switching Amplifier Ma rch 2014 MMBT3640 PNP Switching Amplif ier Description This device is designed for very high-speed saturated switchin g at collector currents to 100 mA. Sour ced from process 65. Ordering Informat ion Part Number MMBT3640 Marking 2J C SOT-23 Mark: 2J E B Package SOT-23 3L Packing Method Tape and Reel Absol ute Maximum Ratings(1),(2) Stresses exc eeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recom mended operating conditions and stressi ng the parts to these levels is not rec ommended. In addition, extended exposur e to stresses above the recommended ope rating conditions may affect device rel iability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Sym bol VCEO VCBO VEBO IC TJ , TSTG Parame ter Collector-Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Coll ector Current - Continuous Junction and Storage Temperature Ran.
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