MMBT3640LT1 Switching Transistor Datasheet

MMBT3640LT1 Datasheet, PDF, Equivalent


Part Number

MMBT3640LT1

Description

Switching Transistor

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBT3640LT1 Datasheet


MMBT3640LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT3640LT1/D
Switching Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBT3640LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3640LT1 = 2J
Symbol
VCEO
VCBO
VEBO
IC
Value
–12
–12
–4.0
–80
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0)
Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –6.0 Vdc, VBE = 0)
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C)
Base Cutoff Current (VCE = –6.0 Vdc, VEB = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
V(BR)CES
VCEO(sus)
V(BR)CBO
V(BR)EBO
ICES
IB
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
–12 — Vdc
–12 — Vdc
–12 — Vdc
–4.0 — Vdc
µAdc
— –0.01
— –1.0
— –10 nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT3640LT1
MMBT3640LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –10 mAdc, VCE = –0.3 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = –6.0 Vdc, IC = –50 mAdc,
VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc)
Storage Time
Fall Time
(VCC = –6.0 Vdc, IC = –50 mAdc,
IB1 = IB2 = –5.0 mAdc)
Turn–On Time
(VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc)
Turn–Off Time
(VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = IB2 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
td
tr
ts
tf
ton
toff
Min
30
20
–0.75
–0.8
500
Max
120
–0.2
–0.6
–0.25
–0.95
–1.0
–1.5
3.5
3.5
10
30
20
12
25
60
35
75
Unit
Vdc
Vdc
MHz
pF
pF
ns
ns
ns
ns
VBB = +1.9 V VCC = –6.0 V
1.0 k 110
0 0.1 µF
–6.8 V
Vin
PULSE SOURCE
RISE TIME 1.0 ns
51
PULSE WIDTH 100 ns
680
Vout
TO SAMPLING SCOPE
INPUT Z 100 k
RISE TIME 1.0 ns
Zin = 50 OHMS
FALL TIME 1.0 ns
NOTES: Collector Current = 50 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA.
Figure 1.
VBB = –6.0 V VCC = 1.5 V
5.0 k 130
5.0 V 0.1 µF
0 Vin
PULSE SOURCE
RISE TIME 1.0 ns
51
PULSE WIDTH 200 ns
5.0 k
Vout
TO SAMPLING SCOPE
INPUT Z 100 k
RISE TIME 1.0 ns
Zin = 50 OHMS
FALL TIME 1.0 ns
NOTES: Collector Current = 10 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 0.5 mA.
Figure 2.
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3640LT1/D S witching Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3640LT1 Motorola Pref erred Device MAXIMUM RATINGS Rating Co llector – Emitter Voltage Collector Base Voltage Emitter – Base Voltag e Collector Current — Continuous Symb ol VCEO VCBO VEBO IC Value –12 –12 –4.0 –80 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CH ARACTERISTICS Characteristic Total Devi ce Dissipation FR– 5 Board(1) TA = 25 °C Derate above 25°C Thermal Resistan ce, Junction to Ambient Total Device Di ssipation Alumina Substrate,(2) TA = 25 °C Derate above 25°C Thermal Resistan ce, Junction to Ambient Junction and St orage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT36 40LT1 = 2J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collect.
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