MMBT3640LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3640LT1/D Switching Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3640LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –12 –12 –4.0 –80 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT3640LT1 = 2J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector – Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –6.0 Vdc, VBE = 0) (VCE = –6.0 Vdc, VBE = 0, TA = 65°C) Base Cutoff Current (VCE = –6.0 Vdc, VEB = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — IB — –0.01 –1.0 –10 nAdc –12 –12 –12 –...