Switching Transistor. MMBT3646 Datasheet


MMBT3646 Transistor. Datasheet pdf. Equivalent


Part Number

MMBT3646

Description

Switching Transistor

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBT3646 Datasheet


MMBT3646
MMBT3646
Switching Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCES
VCBO
VEBO
IC
PD
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation
- Derate above 25°C
- Continuous
@ TA=25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
V(BR)CES
Collector-Emitter Breakdown Voltage (IC = 100µAdc, VBE = 0)
VCEO(SUS)
Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0)
V(BR)CBO
Collector-Base Breakdown Voltage (IC = 100µAdc, IE = 0)
V(BR)EBO
Emitter-Base Breakdown Voltage (IE = 100µAdc, IC = 0)
ICES
Collector Cut-off Current (VCE = 20Vdc, VBE = 0)
(VCE = 20Vdc, VBE = 0, TA = 65°C)
On Characteristics (1)
hFE
VCE(sat)
VBE(sat)
DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc)
(IC = 100mAdc, VCE = 0.5Vdc)
(IC = 300mAdc, VCE = 1Vdc)
Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
(IC = 30mA, IB = 3mA, TA =65°C)
Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
Value
15
40
40
5
300
625
5
150
Units
V
V
V
mA
mW
mW/°C
°C
Min. Typ. Max. Units
40 V
15 V
40 V
5V
0.5 µA
3
30
25
15
0.73
120
0.2
0.28
0.5
0.3
0.95
1.2
1.7
V
V
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

MMBT3646
Electrical Characteristics TC=25°C unless otherwise noted) (Continued)
Symbol
Parameter
Small-Signal Characteristics
Cobo
Output Capacitance
(VCE = 5Vdc, IE = 0, f = 1MHz)
Cibo Input Capacitance
(VEB = 0.5Vdc, IC = 0, f = 1MHz)
Switching Characteristics
ton Turn-On Time
td Delay Time
tr Rise Time
toff Turn-Off Time
tf Fall Time
ts Storge Time
VCC = 10Vdc, IC = 300mAdc,
IB1 = 30mAdc, VCE(off) = 3V
VCC = 10Vdc, IC = 300mAdc,
IB1 = IB2 = 30mAdc
Min. Typ. Max. Units
5 pF
8 pF
18 ns
10 ns
15 ns
28 ns
15 ns
20 ns
Thermal Characteristics
Symbol
RθJA
RθJC
Parameter
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Min. Typ. Max. Units
200 °C
83.3 °C
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002


Features MMBT3646 MMBT3646 Switching Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. C ollector Absolute Maximum Ratings TC=2 5°C unless otherwise noted Symbol VCEO VCES VCBO VEBO IC PD TJ, TSTG Paramete r Collector-Emitter Voltage Collector-E mitter Voltage Collector-Base Voltage E mitter-Base Voltage Collector Current ( DC) Total Device Dissipation - Derate a bove 25°C - Continuous @ TA=25°C Valu e 15 40 40 5 300 625 5 150 mA mW mW/°C °C Units V V V Operating and Storage Junction Temperature Range Electrical Characteristics TC=25°C unless otherw ise noted Symbol Off Characteristics V( BR)CES VCEO(SUS) V(BR)CBO V(BR)EBO ICES Parameter Min. 40 15 40 5 0.5 3 30 25 15 120 Typ. Max. Units V V V V µA Coll ector-Emitter Breakdown Voltage (IC = 1 00µAdc, VBE = 0) Collector-Emitter Sus taining Voltage (1) (IC = 10mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100µAdc, IE = 0) Emitter-Base Break down Voltage (IE = 100µAdc, IC = 0) Co llector Cut-off Current (VCE = 20Vdc, VBE = 0) (VCE = 20Vdc, VBE = 0, TA .
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