MMBT3702 Purpose Amplifier Datasheet

MMBT3702 Datasheet, PDF, Equivalent


Part Number

MMBT3702

Description

PNP General Purpose Amplifier

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBT3702 Datasheet


MMBT3702
Discrete POWER & Signal
Technologies
MPS3702
MMBT3702
C
C
BE
TO-92
SOT-23
Mark: 137
E
B
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500mA. Sourced from
Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
800
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPS3702
625
5.0
83.3
200
*MMBT3702
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT3702
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 20 V, IE = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 5.0 V, IC = 50 mA
IC = 50 mA, IB = 5.0 mA
IC = 50 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
fT Current Gain - Brandwidth Product
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 10 V, f = 1.0 MHz
IC = 50 mA, VCE = 5.0 V,
f = 20 MHz
25 V
40 V
5.0 V
100 nA
100 nA
60 300
0.25
0.6 1.0
V
V
12 pF
100 MHz


Features MPS3702 / MMBT3702 Discrete POWER & Sig nal Technologies MPS3702 MMBT3702 C E C BE TO-92 SOT-23 Mark: 137 B PNP General Purpose Amplifier This device i s designed for use as general purpose a mplifiers and switches requiring collec tor currents to 500mA. Sourced from Pro cess 63. See PN2907A for characteristic s. Absolute Maximum Ratings* Symbol VC EO VCBO VEBO IC TJ, Tstg Collector-Emit ter Voltage Collector-Base Voltage Emit ter-Base Voltage Collector Current - Co ntinuous TA = 25°C unless otherwise n oted Parameter Value 25 40 5.0 800 -5 5 to +150 Units V V V mA °C Operatin g and Storage Junction Temperature Rang e *These ratings are limiting values a bove which the serviceability of any se miconductor device may be impaired. NOT ES: 1) These ratings are based on a max imum junction temperature of 150 degree s C. 2) These are steady state limits. The factory should be consulted on appl ications involving pulsed or low duty c ycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA.
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