NPN TRANSISTOR. MMBT3904 Datasheet


MMBT3904 TRANSISTOR. Datasheet pdf. Equivalent


Part Number

MMBT3904

Description

SMALL SIGNAL NPN TRANSISTOR

Manufacture

STMicroelectronics

Total Page 4 Pages
Datasheet
Download MMBT3904 Datasheet


MMBT3904
® MMBT3904
SMALL SIGNAL NPN TRANSISTOR
Type
MMBT3904
Marking
34
s SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
s MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
s TAPE AND REEL PACKING
s THE PNP COMPLEMENTARY TYPE IS
MMBT3906
PRELIMINARY DATA
APPLICATIONS
s WELL SUITABLE FOR PORTABLE
EQUIPMENT
s SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
Ptot Total Dissipation at TC = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
June 2002
Value
60
40
6
200
350
-65 to 150
150
Unit
V
V
V
mA
mW
oC
oC
1/4

MMBT3904
MMBT3904
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Device mounted on a PCB area of 1 cm2
Max
357.1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX Collector Cut-off
Current (VBE = -3 V)
IBEX Base Cut-off Current
(VBE = -3 V)
V(BR)CEOCollector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VCE = 30 V
VCE = 30 V
IC = 1 mA
IC = 10 µA
IE = 10 µA
IC = 10 mA
IC = 50 mA
IB = 1 mA
IB = 5 mA
VBE(sat)Base-Emitter
Saturation Voltage
IC = 10 mA
IC = 50 mA
IB = 1 mA
IB = 5 mA
hFEDC Current Gain
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 50 mA
IC = 100 mA
VCE = 1 V
VCE = 1 V
VCE = 1 V
VCE = 1 V
VCE = 1 V
fT Transition Frequency IC = 10 mA VCE = 20 V f = 100 MHz
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1MHz
NF Noise Figure
td Delay Time
tr Rise Time
VCE = 5 V IC = 0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 K
IC = 10 mA
VCC = 30 V
IB = 1 mA
ts Storage Time
tf Fall Time
IC = 10 mA
VCC = 30 V
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
IB1 = -IB2 = 1 mA
Min.
40
60
6
0.65
60
80
100
60
30
250
Typ.
270
4
18
5
Max.
50
50
0.2
0.2
0.85
0.95
300
35
35
200
50
Unit
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
2/4


Features ® MMBT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type MMBT3904 s Mar king 34 s s s SILICON EPITAXIAL PLAN AR NPN TRANSISTOR MINIATURE SOT-23 PLAS TIC PACKAGE FOR SURFACE MOUNTING CIRCUI TS TAPE AND REEL PACKING THE PNP COMPLE MENTARY TYPE IS MMBT3906 SOT-23 APPLIC ATIONS WELL SUITABLE FOR PORTABLE EQUIP MENT s SMALL LOAD SWITCH TRANSISTOR WIT H HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V E BO IC P tot T stg Tj Parameter Collecto r-Base Voltage (I E = 0) Collector-Emit ter Voltage (I B = 0) Emitter-Base Volt age (I C = 0) Collector Current Total D issipation at T C = 25 C Storage Temper ature Max. Operating Junction Temperatu re o Value 60 40 6 200 350 -65 to 150 150 Unit V V V mA mW o o C C June 20 02 1/4 MMBT3904 THERMAL DATA R thj-am b • Thermal Resistance Junction-Ambie nt 2 Max 357.1 o C/W • Device mo unted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I.
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