®
MMBT3904
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Type MMBT3904
s
Marking 34
s
s s
SILICON EPITAXIAL PLANAR ...
®
MMBT3904
SMALL SIGNAL
NPN TRANSISTOR
PRELIMINARY DATA
Type MMBT3904
s
Marking 34
s
s s
SILICON EPITAXIAL PLANAR
NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE
PNP COMPLEMENTARY TYPE IS MMBT3906 SOT-23
APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH
TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value 60 40 6 200 350 -65 to 150 150
Unit V V V mA mW
o o
C C
June 2002
1/4
MMBT3904
THERMAL DATA
R thj-amb Thermal Resistance Junction-Ambient
2
Max
357.1
o
C/W
Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I BEX Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Test Conditions V CE = 30 V V CE = 30 V I C = 1 mA 40 Min. Typ. Max. 50 50 Unit nA nA V
V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I C = 10 µ A
60
V
V (BR)EBO
I E = 10 µ A
6
V
V CE(sat) ∗ V BE(sat) ∗ h...