MMBT3904 Signal Transistors Datasheet

MMBT3904 Datasheet, PDF, Equivalent


Part Number

MMBT3904

Description

Small Signal Transistors

Manufacture

General

Total Page 3 Pages
Datasheet
Download MMBT3904 Datasheet


MMBT3904
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
MMBT3904
Small Signal Transistors (NPN)
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
SOT-23
Top View
FEATURES
¨ NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the PNP
transistor MMBT3906 is recommended.
12
.037(0.95) .037(0.95)
¨ This transistor is also available in the TO-92
case with the type designation 2N3904.
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 1AM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at TA = 25 ¡C
Thermal Resistance Junction to Substrate Backside
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
NOTES:
(1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
RqSB
RqJA
Tj
TS
VALUE
60
40
6.0
200
225(1)
300(2)
320(1)
450(1)
150
Ð65 to +150
UNIT
V
V
V
mA
mW
¡C/W
¡C/W
¡C
¡C
1/5/99

MMBT3904
MMBT3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at IC = 10 mA, IE = 0
Collector-Emitter Breakdown Voltage
at IC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at IE = 10 mA, IC = 0
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Collector-Emitter Cutoff Current
VEB = 3 V, VCE = 30 V
Emitter-Base Cutoff Current
VEB = 3 V, VCE = 30 V
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 50 mA
at VCE = 1 V, IC = 100 mA
Input Impedance
at VCE = 10 V, IC = 1 mA, f = 1 kHz
Gain-Bandwidth Product
at VCE = 20 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at VCB = 5 V, f = 100 kHz
Emitter-Base Capacitance
at VEB = 0.5 V, f = 100 kHz
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VCEsat
VBEsat
VBEsat
ICEV
IEBV
hFE
hFE
hFE
hFE
hFE
hie
fT
CCBO
CEBO
MIN.
60
40
6.0
Ð
Ð
Ð
Ð
Ð
Ð
40
70
100
60
30
1
300
Ð
Ð
MAX.
Ð
Ð
Ð
0.2
0.3
0.85
0.95
50
50
Ð
Ð
300
Ð
Ð
10
Ð
4
8
UNIT
V
V
V
V
V
V
V
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
MHz
pF
pF


Features NEW PRODUCT NEW PRODUCT NEW PRODUCT M MBT3904 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES ¨ NPN Silicon Epitaxial Planar Transisto r for switching and amplifier applicati ons. ¨ As complementary type, the PNP transistor MMBT3906 is recommended. ¨ This transistor is also available in th e TO-92 case with the type designation 2N3904. .045 (1.15) .037 (0.95) Top Vi ew 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .0 16 (0.4) .016 (0.4) .102 (2.6) .094 ( 2.4) MECHANICAL DATA Case: SOT-23 Plas tic Package Weight: approx. 0.008g Mark ing code: 1AM Dimensions in inches and (millimeters) Pin configuration 1 = Ba se, 2 = Emitter, 3 = Collector. MAXIMU M RATINGS AND ELECTRICAL CHARACTERISTIC S Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL VAL UE UNIT Collector-Base Voltage Collec tor-Emitter Voltage Emitter-Base Voltag e Collector Current Power Dissipation at TA = 25 ¡C VCBO VCEO VEBO.
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