MMBT3904 Purpose Amplifier Datasheet

MMBT3904 Datasheet, PDF, Equivalent


Part Number

MMBT3904

Description

NPN General Purpose Amplifier

Manufacture

Micro Commercial Components

Total Page 4 Pages
Datasheet
Download MMBT3904 Datasheet


MMBT3904
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MMBT3904
Features
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation
C
Pin Configuration
Top View
1AM
BE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
40
Vdc
(IC=1.0mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
60
Vdc
(IC=10µAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
Vdc
(IE=10µAdc, IC=0)
ICBO Collector Cutoff Current
50 nAdc
(VCB=30Vdc, VBE=3.0Vdc)
ICEX Collector Cutoff Current
50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
40
70
100
60
30
0.65
300
0.2
0.3
0.85
0.95
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
300
MHz
Cobo Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
4.0 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
8.0 pF
NF Noise Figure
(IC=100µAdc, VCE=5.0Vdc, RS=1.0k
5.0 dB
f=10Hz to 15.7kHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, VBE=0.5Vdc
tr
Rise Time
IC=10mAdc, IB1=1.0mAdc)
ts Storage Time (VCC=3.0Vdc, IC=10mAdc
tf
Fall Time
IB1=IB2=1.0mAdc)
*Pulse Width 300µs, Duty Cycle 2.0%
35 ns
35 ns
200 ns
50 ns
NPN General
Purpose Amplifier
SOT-23
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com

MMBT3904
MMBT3904
DC Current Gain vs Collector Current
220
VCE = 5.0V
200
160
hFE
120
80
40
0.1 1 10 100
IC (mA)
Collector Saturation
Volatge vs Collector Current
.150
IC/IB = 10
.125
TA = 25°C
.100
VCE(SAT)
-
(V)
.075
.050
.025
0
0.1 1.0
10 100
IC - (mA)
Collector Cutoff Current vs
Ambient Temperature
1000
VCB = 20V
100
ICBO - (mA)
10
1.0
0
25 50 75 100 125 150
TA - (°C)
MCC
Base-Emitter ON Voltage vs
Collector Current
1.2
VCE = 5.0V
1.0
0.8 TA = 25°C
VBE(ON) - (V)
0.6
0.4 TA = 100°C
0.2
0
0.1 1.0
10
IC - (mA)
100
Base Saturation
Voltage vs Collector Current
1.2
IC/IB = 10
TA = 25°C
1.1
1.0
VBE(SAT) - (V) .90
.80
.70
.60
0.1
1.0 10
IC - (mA)
100
Capacitance vs
Reverse Bias Voltage
1.0 f = 1 MHz
8
6
pF
4
2
0
0.1
CIB
COB
1.0
Volts - (V)
10
www.mccsemi.com


Features MCC Features • •    omponents 21201 Itasca Street Chatswort h    !"# $ %    !"# MMBT3904 Surface M ount SOT-23 Package Capable of 350mWatt s of Power Dissipation C Pin Configurat ion Top View NPN General Purpose Ampli fier SOT-23 A D 1AM B E Min 40 60 5.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc G H J F E C B Electrical Characteristic s @ 25°C Unless Otherwise Specified Sy mbol Parameter Collector-Emitter Breakd own Voltage* (I C=1.0mAdc, IB=0) Collec tor-Base Breakdown Voltage (I C=10µ Ad c, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Collector Cutoff Current (VCB=30Vdc, VBE=3.0Vdc) Collect or Cutoff Current (VCE=30Vdc, VBE=3.0Vd c) DC Current Gain* (I C=0.1mAdc, VCE=1 .0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=1 0mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0 Vdc) (I C=100mAdc, VCE=1.0Vdc) Collecto r-Emitter Saturation Voltage (I C=10mAd c, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc,.
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