MMBT3904 Transistor NPN Datasheet

MMBT3904 Datasheet, PDF, Equivalent


Part Number

MMBT3904

Description

General Purpose Transistor (NPN)

Manufacture

Comchip Technology

Total Page 6 Pages
Datasheet
Download MMBT3904 Datasheet


MMBT3904
General Purpose Transistor (NPN)
MMBT3904
NPN Silicon Type
COMCHIP
www.comchiptech.com
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBT3906)
Ideal for Medium Power Amplification and
Switching
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
COLLECTOR
3
1
BASE
2
EMITTER
12
.037(0.95) .037(0.95)
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MDS0306001A
Page 1

MMBT3904
General Purpose Transistor
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
COMCHIP
www.comchiptech.com
Symbol
V(BR)CEO
Min
40
V(BR)CBO
60
V(BR)EBO
6.0
IBL
ICEX
Max Unit
Vdc
Vdc
Vdc
50 nAdc
50 nAdc
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
ON CHARACTERISTIC
DC Current Gain (1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc,
Fall Time
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
HFE
VCE(sat)
VBE(sat)
Min
40
70
100
60
30
0.65
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
300
1.0
0.5
100
1.0
td
tr
ts
tf
Max Unit
300
Vdc
0.2
0.3
Vdc
0.85
0.95
MHz
4.0 pF
8.0 pF
10 k ohms
8.0 X 10– 4
400
40 mmhos
5.0 dB
35
ns
35
200
ns
50
MDS0306001A
Page 2


Features General Purpose Transistor (NPN) COMCHI P www.comchiptech.com MMBT3904 NPN Sil icon Type Features Epitaxial Planar Di e Construction Complementary PNP Type A vailable (MMBT3906) Ideal for Medium Po wer Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 COLLEC TOR 3 1 BASE 1 2 .006 (0.15)max. .0 06 (0.15) .002 (0.05) .037(0.95) .037( 0.95) 2 EMITTER .020 (0.5) .020 (0.5 ) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Collector – Emitter Voltage Co llector – Base Voltage Emitter – Ba se Voltage Collector Current — Contin uous Symbol VCEO VCBO VEBO IC Value 4 0 60 6.0 200 Unit Vdc Vdc Vdc mAdc TH ERMAL CHARACTERISTICS Characteristic To tal Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total De vice Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal R esistance Junction to Ambient Junction and Storage Temperature Symbol PD Ma.
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