MMBT3904WT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MMBT3904WT1/D General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. NPN MMBT3904WT1 PNP MMBT3906WT1 GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol VCEO VCBO VEBO IC Value 40 –40 60 –40 6.0 –5.0 200 –200 Unit Vdc Vdc Vdc 3 Collector Current — Continuous MMBT3904WT1 MMBT3906WT1 mAdc 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C CASE 419–02, STYLE 3 SOT–323/SC–70 DEVICE MARKING MMBT3904WT1 = AM MMBT3906WT1 = 2A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB =...