Purpose Transistor. MMBT3904WT1 Datasheet


MMBT3904WT1 Transistor. Datasheet pdf. Equivalent


MMBT3904WT1


General Purpose Transistor
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document MMBT3904WT1/D

General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

NPN MMBT3904WT1 PNP MMBT3906WT1
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol VCEO VCBO VEBO IC Value 40 –40 60 –40 6.0 –5.0 200 –200 Unit Vdc Vdc Vdc
3

Collector Current — Continuous MMBT3904WT1 MMBT3906WT1

mAdc
1 2

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 – 55 to +150 Unit mW °C/W °C

CASE 419–02, STYLE 3 SOT–323/SC–70

DEVICE MARKING
MMBT3904WT1 = AM MMBT3906WT1 = 2A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = ...



MMBT3904WT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
MMBT3904WT1/D
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
NPN
MMBT3904WT1
PNP
MMBT3906WT1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
MMBT3904WT1
MMBT3906WT1
Collector – Base Voltage
MMBT3904WT1
MMBT3906WT1
Emitter – Base Voltage
MMBT3904WT1
MMBT3906WT1
Collector Current — Continuous MMBT3904WT1
MMBT3906WT1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
TJ, Tstg
Value
40
–40
60
–40
6.0
–5.0
200
–200
Max
150
833
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 419–02, STYLE 3
SOT–323/SC–70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
V(BR)CEO
40
Vdc
–40 —
V(BR)CBO
60
Vdc
–40 —
V(BR)EBO
6.0
Vdc
–5.0 —
IBL nAdc
— 50
— –50
ICEX
nAdc
50
— –50
v v1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT3904WT1
NPN MMBT3904WT1 PNP MMBT3906WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS(2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
MMBT3904WT1
hFE
MMBT3906WT1
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat)
MMBT3904WT1
MMBT3906WT1
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
MMBT3904WT1
MMBT3906WT1
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
MMBT3904WT1
MMBT3906WT1
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Cobo
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Cibo
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
hie
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
hre
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
hfe
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
hoe
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz)
(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k , f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
NF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc)
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
MMBT3904WT1
MMBT3906WT1
td
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(IC = –10 mAdc, IB1 = –1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
tr
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(VCC = –3.0 Vdc, IC = –10 mAdc)
MMBT3904WT1
MMBT3906WT1
ts
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = –1.0 mAdc)
v v2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MMBT3904WT1
MMBT3906WT1
tf
Min
40
70
100
60
30
60
80
100
60
30
0.65
–0.65
300
250
1.0
2.0
0.5
0.1
100
100
1.0
3.0
Max Unit
300
300
0.2
0.3
–0.25
–0.4
0.85
0.95
–0.85
–0.95
Vdc
Vdc
MHz
pF
4.0
4.5
pF
8.0
10.0
k
10
12
X 10– 4
8.0
10
400
400
mmhos
40
60
dB
5.0
4.0
35
35
ns
35
35
200
225
ns
50
75
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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