MMBT3906 Switching Transistor Datasheet

MMBT3906 Datasheet, PDF, Equivalent


Part Number

MMBT3906

Description

PNP Silicon Switching Transistor

Manufacture

Infineon Technologies AG

Total Page 12 Pages
Datasheet
Download MMBT3906 Datasheet


MMBT3906
PNP Silicon Switching Transistors
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor
with good matching in one package
Complementary types:
SMBT3904...MMBT3904 (NPN)
SMBT3906S/ U: for orientation in reel
see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBT3906...MMBT3906
Type
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
Marking
Pin Configuration
Package
s2A 1=B 2=E 3=C - - - SOT23
s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS 71°C, SOT23, MMBT3906
TS 115°C, SOT363, MMBT3906S
TS 107°C, SC74, MMBT3906U
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Value
40
40
6
200
330
250
330
150
-65 ... 150
Unit
V
mA
mW
°C
1 2012-08-21

MMBT3906
SMBT3906...MMBT3906
Thermal Resistance
Parameter
Junction - soldering point1)
SMBT3906/ MMBT3906
SMBT3906S
SMBT3906U
Symbol
RthJS
Value
240
140
130
Unit
mW
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 40
-
-
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 40
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO 6 - -
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
ICBO
- - 50
DC current gain1)
hFE
IC = 100 µA, VCE = 1 V
60 -
-
IC = 1 mA, VCE = 1 V
80 -
-
IC = 10 mA, VCE = 1 V
100 - 300
IC = 50 mA, VCE = 1 V
60 -
-
IC = 100 mA, VCE = 1 V
30 -
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
- - 0.25
- - 0.4
VBEsat
0.65 - 0.85
- - 0.95
1Pulse test: t < 300µs; D < 2%
Unit
V
nA
-
V
2 2012-08-21


Features PNP Silicon Switching Transistors • Hi gh DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation volt age • For SMBT3906S and SMBT3906U: Tw o (galvanic) internal isolated transist or with good matching in one package Complementary types: SMBT3904...MMBT3 904 (NPN) • SMBT3906S/ U: for orienta tion in reel see package information be low • Pb-free (RoHS compliant) packag e • Qualified according AEC Q101 SMB T3906...MMBT3906 Type SMBT3906/ MMBT39 06 SMBT3906S SMBT3906U Marking Pin Co nfiguration Package s2A 1=B 2=E 3=C - - - SOT23 s2A 1=E1 2=B1 3=C2 4=E2 5=B 2 6=C1 SOT363 s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Paramet er Collector-emitter voltage Collector- base voltage Emitter-base voltage Colle ctor current Total power dissipationTS ≤ 71°C, SOT23, MMBT3906 TS ≤ 115° C, SOT363, MMBT3906S TS ≤ 107°C, SC7 4, MMBT3906U Junction temperature Stora ge temperature Symbol VCEO VCBO VEBO I C Ptot Tj Tstg Value 40 40 6 200 330 250 330 150 -65 ... 150 .
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