MMBT3906 Transistor PNP Datasheet

MMBT3906 Datasheet, PDF, Equivalent


Part Number

MMBT3906

Description

General Purpose Transistor (PNP)

Manufacture

Comchip Technology

Total Page 5 Pages
Datasheet
Download MMBT3906 Datasheet


MMBT3906
General Purpose Transistor (PNP)
MMBT3906
PNP Silicon Type
COMCHIP
www.comchiptech.com
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
.119 (3.0)
.110 (2.8)
.020 (0.5)
3
SOT-23
Top View
COLLECTOR
3
1
BASE
2
EMITTER
12
.037(0.95) .037(0.95)
.020 (0.5) .020 (0.5)
.103 (2.6)
.086 (2.2)
Dimensions in inches (millimeters)
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–200
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MDS0306002A
Page 1

MMBT3906
General Purpose Transistor
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
–40
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
Vdc
–40
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
Vdc
–5.0
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
IBL nAdc
–50
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width 300 µs, Duty Cycle 2.0%.
ICEX
nAdc
–50
REM : Thermal Clad is a trademark of the Bergquist Company.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Symbol
HFE
VCE(sat)
VBE(sat)
Min
60
80
100
60
30
–0.65
Max
300
–0.25
–0.4
–0.85
–0.95
Unit
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc,
IC = –10 mAdc, IB1 = –1.0 mAdc)
Storage Time
Fall Time
(VCC = –3.0 Vdc, IC = –10 mAdc,
IB1 = IB2 = –1.0 mAdc)
3.Pulse Test: Pulse Width ı 300 ıs, Duty Cycle ı 2.0%.
fT MHz
250
Cobo
pF
4.5
Cibo
pF
10
hie k
2.0 12
hre X 10– 4
0.1 10
hfe
100 400
hoe mmhos
3.0 60
NF dB
4.0
td 35
ns
tr 35
ts 225
ns
tf 75
MDS0306002A
Page 2


Features General Purpose Transistor (PNP) COMCHI P www.comchiptech.com MMBT3906 PNP Sil icon Type Features Epitaxial Planar Di e Construction Complementary NPN Type A vailable (MMBT3904) Ideal for Medium Po wer Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 1 COLL ECTOR 2 .006 (0.15)max. .006 (0.15) . 002 (0.05) 3 1 BASE .037(0.95) .037(0 .95) 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS R ating Collector – Emitter Voltage Col lector – Base Voltage Emitter – Bas e Voltage Collector Current — Continu ous Symbol VCEO VCBO VEBO IC Value 40 –40 –5.0 –200 Unit Vdc Vdc V dc mAdc THERMAL CHARACTERISTICS Charac teristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25 C Thermal Resistance Junction to Ambie nt Total Device Dissipation Alumina Sub strate,(2) TA = 25°C Derate above 25° C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD .
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