Purpose Transistor. MMBT3906L Datasheet


MMBT3906L Transistor. Datasheet pdf. Equivalent


Part Number

MMBT3906L

Description

General Purpose Transistor

Manufacture

ON

Total Page 7 Pages
Datasheet
Download MMBT3906L Datasheet


MMBT3906L
MMBT3906L, SMMBT3906L
General Purpose Transistor
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
ICM
Value
−40
−40
−5.0
−200
−800
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
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COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
2A M G
G
1
2A = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package Shipping
MMBT3906LT1G SOT−23 3,000 / Tape &
(Pb−Free)
Reel
MMBT3906LT3G
SMMBT3906LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
3,000 / Tape &
Reel
SMMBT3906LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
August, 2017 − Rev. 13
1
Publication Order Number:
MMBT3906LT1/D

MMBT3906L
MMBT3906L, SMMBT3906L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
−40 −
Collector −Base Breakdown Voltage
(IC = −10 mAdc, IE = 0)
V(BR)CBO
Vdc
−40 −
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−5.0
Vdc
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
IBL nAdc
− −50
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc)
ICEX
nAdc
− −50
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
HFE
60 −
80 −
100 300
60 −
30 −
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Vdc
− −0.25
− −0.4
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat)
−0.65
−0.85
−0.95
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)
fT MHz
250 −
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
pF
− 4.5
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
− 10
Input Impedance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hie kW
2.0 12
hre X 10− 4
0.1 10
Small −Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hfe
100 400
Output Admittance
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
hoe mmhos
3.0 60
Noise Figure
(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF dB
− 4.0
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc,
IC = −10 mAdc, IB1 = −1.0 mAdc)
td − 35
ns
tr − 35
Storage Time
Fall Time
(VCC = −3.0 Vdc, IC = −10 mAdc,
IB1 = IB2 = −1.0 mAdc)
ts − 225
ns
tf − 75
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2


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