MMBT3906LT1 Purpose Transistor Datasheet

MMBT3906LT1 Datasheet, PDF, Equivalent


Part Number

MMBT3906LT1

Description

General Purpose Transistor

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT3906LT1 Datasheet


MMBT3906LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT3906LT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBT3906LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3906LT1 = 2A
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–200
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width 300 µs, Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
–40 —
Vdc
–40 —
Vdc
–5.0 —
nAdc
— –50
nAdc
— –50
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT3906LT1
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 k, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc,
IC = –10 mAdc, IB1 = –1.0 mAdc)
Storage Time
Fall Time
(VCC = –3.0 Vdc, IC = –10 mAdc,
IB1 = IB2 = –1.0 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
HFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
60
80
100
60
30
–0.65
250
2.0
0.1
100
3.0
Max Unit
300
–0.25
–0.4
–0.85
–0.95
Vdc
Vdc
MHz
pF
4.5
pF
10
k
12
X 10– 4
10
400
mmhos
60
dB
4.0
35
ns
35
225
ns
75
+0.5 V
10.6 V
< 1 ns
10 k
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
CS < 4 pF*
0
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
< 1 ns
10.9 V
10 k
1N916
3V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D G eneral Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1 Motorol a Preferred Device MAXIMUM RATINGS Rat ing Collector – Emitter Voltage Colle ctor – Base Voltage Emitter – Base Voltage Collector Current — Continuou s Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –200 2 EMITTER 1 3 Un it Vdc Vdc Vdc mAdc 2 CASE 318 – 08 , STYLE 6 SOT– 23 (TO – 236AB) THE RMAL CHARACTERISTICS Characteristic Tot al Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal R esistance Junction to Ambient Total Dev ice Dissipation Alumina Substrate,(2) T A = 25°C Derate above 25°C Thermal Re sistance Junction to Ambient Junction a nd Storage Temperature Symbol PD Max 22 5 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/ W mW mW/°C °C/W °C DEVICE MARKING M MBT3906LT1 = 2A ELECTRICAL CHARACTERIS TICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Co.
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