Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT3906LT1/D
General Purpose Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBT3906LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –200
2 EMITTER
1
3
Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
MMBT3906LT1 = 2A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Base Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) Collector Cutoff Current (VCE = –30 Vdc, VEB = –3.0 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO –40 V(BR)CBO –40 V(BR)EBO –5.0 IBL — ICEX — –50 –50 — — —
Vdc Vdc Vdc nAdc nAdc
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) HFE 60 80 100 60 30 VCE(sat) — — VBE(sat) –0.65 — –0.85 –0.95 –0.25 –0.4 Vdc — — 300 — — Vdc —
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Noise Figure (IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) fT 250 Cobo — Cibo — hie 2.0 hre 0.1 hfe 100 hoe 3.0 NF — 4.0 60 dB 400 10 — 12 X 10– 4 10 kΩ 4.5 pF — pF MHz
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width (VCC = –3.0 Vdc, VBE = 0.5 Vdc, IC = –10 mAdc, IB1 = –1.0 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc) td tr ts tf — — — — 35 ns 35 225 ns 75
v 300 ms, Duty Cycle v 2.0%.
3V
3V +9.1 V 275 < 1 ns 275 10 k 0 CS < 4 pF* 1N916 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V CS < 4 pF*
< 1 ns +0.5 V 10 k
10.6 V
300 ns DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906LT1
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10
QT QA
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
200
Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200
Figure 4. Charge Data
VCC = 40 V IB1 = IB2 IC/IB = 20 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
Figure 6. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMBT3906LT1
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA
NF, NOISE FIGURE (dB)
4.0
3.0
2.0 SOURCE RESISTANCE = 2..