MMBT404A Low-Power Transistor Datasheet

MMBT404A Datasheet, PDF, Equivalent


Part Number

MMBT404A

Description

The Small-Signal PNP Silicon Chopper Low-Power Transistor

Manufacture

ETC

Total Page 2 Pages
Datasheet
Download MMBT404A Datasheet


MMBT404A
PLANETA
MMBT404A
The Small-Signal
PNP Silicon Chopper
Low-Power Transistor
DESCRIPTION
The MMBT404A is an PNP silicon epitaxial transistor designed for
application in TV tuner, frequency converter, oscillator, mixer and amplifier.
It has dynamic range and good current characteristic.
This chopper transistor in 3-Pin surface-mountable plastic package
SOT23 offers superior quality and performance at low cost.
FEATURES
Ø High collector current
IC= -300 mA
Ø Low saturation voltages
V =CE(sat) -0.4 V
V =BE(sat) -1.5 V
Ø High total power dissipation
PT= 200 mW
Ø Excelent hFE linearity
1
3
2
1 – Collector
2 – Emitter
3 – Base
JEDEC
EIAJ
GOST
Weight:
SOT23
TO-236
SC-59
ÊÒ-46
0.01g
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Total Dissipation
Junction Temperature
Operating Junction Temperature Range
Storage Temperature Range
VCEO
VCBO
VEBO
IC
Ptot
TJMAX
TOPR
TSTG
Value
-35
-40
-25
-300
200
150
-60 to +100
-65 to +150
Unit
V
V
V
mA
mW
°C
°C
°C
ORDERING INFORMATION
Device
MMBT404A
MMBT404A-T1
MMBT404A-T3
Marking
2N
2N
Package
SOT-23
SOT-23
2N SOT-23
Quantity
3 Kpcs / Reel
10 Kpcs / Reel
Packing Style
In bulk
Embossed tape 8-mm wide 7'' dia.
Pin 1 (Collector) face to perforation
side of the tape.
Embossed tape 8-mm wide 13''
dia. Pin 1 (Collector) face to
perforation side of the tape.
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© August 2001 Rev 1
Ph./Fax: +7–816–2231736
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta

MMBT404A
MMBT404A
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol Min
Typ
DC CHARACTERISTICS
Collector – Base Cutoff Current,
IE= 0mA, VCB=-10V
Emitter – Base Cutoff Current,
IC= 0mA, VEB=-10V
Collector – Base Breakdown Voltage,
IC= -10µA, IE= 0mA
Collector – Emitter Breakdown Voltage,
IC= -10mA, IB= 0mA
Emitter – Base Breakdown Voltage,
IE= -10µA, IC= 0mA
DC Current Gain,
IC= -12mA, VCE=-0.15V
AC CHARACTERISTICS
Collector – Emitter Saturation Voltage,
IC=-300mA, IB=-30mA
Base – Emitter Saturation Voltage,
IC=-300mA, IB=-30mA
Collector – Base Capacitance,
IE= 0mA, VCB=-10V, f=500kHz
Current Gain – Bandwidth Product,
IC=-10mA, VCE= -5V, f=500kHz
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)CEO
hFE1
-40
-35
-25
80
VCE(sat)
VBE(sat)
COB
fT
4
PACKAGE DIMENSIONS of MMBT404A in mm
Max
-100
-100
400
-0.4
-1.5
20
3.1max
1,9
A
B
Base
7-10
4 degrees
Emitter
7-10
4 degrees
1.15max
Collector
T0,1
A
Ò0,2
0.46max
3 pins
B
Unit
nA
nA
V
V
V
V
V
pF
MHz
PLASTIC CASE KT-46
Ph./Fax: +7–816–2231736
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta
2
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
© August 2001 Rev 1


Features PLANETA The Small-Signal PNP Silicon Cho pper Low-Power Transistor DESCRIPTION MMBT404A The MMBT404A is an PNP silico n epitaxial transistor designed for app lication in TV tuner, frequency convert er, oscillator, mixer and amplifier. It has dynamic range and good current cha racteristic. This chopper transistor in 3-Pin surface-mountable plastic packag e SOT23 offers superior quality and per formance at low cost. 1 3 2 FEATURES Ø Ø High collector current IC= -300 mA Low saturation voltages VCE(sat)= -0 .4 V VBE(sat)= -1.5 V High total power dissipation PT= 200 mW Excelent hFE lin earity 1 – Collector 2 – Emitter 3 – Base SOT23 JEDEC EIAJ GOST Weight : TO-236 SC-59 ÊÒ-46 0.01g Ø Ø AB SOLUTE MAXIMUM RATINGS (TA = 25 °C) Ra ting Collector – Emitter Voltage Coll ector – Base Voltage Emitter – Base Voltage Collector Current Total Dissip ation Junction Temperature Operating Ju nction Temperature Range Storage Temper ature Range Symbol VCEO VCBO VEBO IC Ptot TJMAX TOPR TSTG Value -35 -40 -25 -300 2.
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