MMBT404ALT1 Chopper Transistor Datasheet

MMBT404ALT1 Datasheet, PDF, Equivalent


Part Number

MMBT404ALT1

Description

Chopper Transistor

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBT404ALT1 Datasheet


MMBT404ALT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT404ALT1/D
Chopper Transistor
PNP Silicon
COLLECTOR
3
MMBT404ALT1
Motorola Preferred Device
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VCBO
VEBO
IC
–35
–40
–25
–150
Vdc
Vdc
Vdc
mAdc
MMBT404ALT1 = 2N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,** TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, Tstg
* FR–5 = 1.0 x 0.75 x 0.062 in.
** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–35
Collector–Emitter Breakdown Voltage
(IC = –10 µAdc, IE = 0)
V(BR)CBO
–40
Emitter–Base Breakdown Voltage
(IE = –10 µAdc, IC = 0)
V(BR)EBO
–25
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = –10 Vdc, IC = 0)
IEBO
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
–100
nAdc
–100
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

MMBT404ALT1
MMBT404ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –12 mAdc, VCE = –0.15 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
VBE(sat)
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
SWITCHING CHARACTERISTICS
Delay time
(VCC = –10 Vdc, IC = –10 mAdc) (Figure 1)
td
Rise Time
(IB1 = –1.0 mAdc, VBE(off) = –14 Vdc)
tr
Storage Time
(VCC = –10 Vdc, IC = –10 mAdc)
ts
Fall Time
(IB1 = IB2 = –1.0 mAdc) (Figure 1)
tf
Min
100
Typ Max Unit
— 400 —
Vdc
— –0.15
— –0.2
Vdc
— –0.85
— –1.0
— 20 pF
43 —
180 —
675 —
160 —
ns
ns
ns
ns
VBB VCC = –10 V
RBB
1.0 k
0.1 µF RB
Vin
10 k
51
1.0 k
TO SCOPE
Vin
(Volts)
VBB
(Volts)
ton, td, tr
–12 +1.4
toff, ts and tf
+20.6
–11.6
Voltages and resistor values shown are
for IC = 10 mA, IC/IB = 10 and IB1 = IB2
Figure 1. Switching Time Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT404ALT1/D C hopper Transistor PNP Silicon COLLECTOR 3 1 BASE MMBT404ALT1 Motorola Preferr ed Device 3 2 EMITTER 1 2 MAXIMUM R ATINGS Rating Collector–Emitter Volta ge Collector–Base Voltage Emitter–B ase Voltage Collector Current — Conti nuous Symbol VCEO VCBO VEBO IC Value 35 –40 –25 –150 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 2 3 (TO – 236AB) DEVICE MARKING MMBT40 4ALT1 = 2N THERMAL CHARACTERISTICS Cha racteristic Total Device Dissipation FR -5 Board,* TA = 25°C Derate above 25° C Thermal Resistance, Junction to Ambie nt Total Device Dissipation Alumina Sub strate,** TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambien t Junction and Storage Temperature * FR –5 = 1.0 x 0.75 x 0.062 in. ** Alumin a = 0.4 x 0.3 x 0.024 in. 99.5% alumina . Symbol PD Max 225 1.8 RθJA PD 556 30 0 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise no.
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