MMBT4124 MOUNT TRANSISTOR Datasheet

MMBT4124 Datasheet, PDF, Equivalent


Part Number

MMBT4124

Description

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Manufacture

Diodes Incorporated

Total Page 3 Pages
Datasheet
Download MMBT4124 Datasheet


MMBT4124
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT4126)
Ideal for Medium Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
BE
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
Value
30
25
5.0
200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
30
25
5.0
hFE
VCE(SAT)
VBE(SAT)
120
60
Cobo
Cibo
hfe
fT
120
300
Max
50
50
360
0.30
0.95
4.0
8.0
480
Unit Test Condition
V IC = 10μA, IE = 0
V IC = 1.0mA, IB = 0
V IE = 10μA, IC = 0
nA VCB = 20V, IE = 0V
nA VEB = 3.0V, IC = 0V
IC = 2.0mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
V IC = 50mA, IB = 5.0mA
V IC = 50mA, IB = 5.0mA
pF
pF
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 1.0V, IC = 2.0mA,
f = 1.0kHz
VCE = 20V, IC = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
MMBT4124
Document number: DS30105 Rev. 11 - 2
1 of 3
www.diodes.com
January 2009
© Diodes Incorporated

MMBT4124
400
350
300
250
200
150
100
50 RθJA = 417°C/W
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
1
IC
IB = 10
MMBT4124
1,000
100
10
1
0.1
1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
10
IC
IB = 10
0.1 1
0.01
0.1
1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
15
f = 1MHz
10
0.1
0.1 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
5
Cibo
Cobo
0
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics
MMBT4124
Document number: DS30105 Rev. 11 - 2
2 of 3
www.diodes.com
January 2009
© Diodes Incorporated


Features Features • Epitaxial Planar Die Constr uction • Complementary PNP Type Avail able (MMBT4126) • Ideal for Medium Po wer Amplification and Switching • Lea d, Halogen and Antimony Free, RoHS Comp liant • "Green" Device (Notes 2 and 4 ) MMBT4124 NPN SMALL SIGNAL SURFACE MO UNT TRANSISTOR Mechanical Data • Case : SOT-23 • Case Material: Molded Plas tic, “Green” Molding Compound, Note 4. UL Flammability Classification Rati ng 94V-0 • Moisture Sensitivity: Leve l 1 per J-STD-020D • Terminal Connect ions: See Diagram • Terminals: Matte Tin Finish annealed over Alloy 42 leadf rame (Lead Free Plating) Solderable per MIL-STD-202, Method 208 • Marking In formation: See Page 3 • Ordering Info rmation: See Page 3 • Weight: 0.008 g rams (approximate) C Top View Maximum Ratings @TA = 25°C unless otherwise sp ecified Characteristic Collector-Base V oltage Collector-Emitter Voltage Emitte r-Base Voltage Collector Current - Cont inuous (Note 1) BE Device Schematic Symbol VCBO VCEO VEBO IC Value 30 25 5.0 200 Unit V V V.
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