MMBT4124 Purpose Amplifier Datasheet

MMBT4124 Datasheet, PDF, Equivalent


Part Number

MMBT4124

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBT4124 Datasheet


MMBT4124
Discrete POWER & Signal
Technologies
2N4124
MMBT4124
C
C
BE
TO-92
SOT-23
Mark: ZC
E
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23. See 2N3904
for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N4124
625
5.0
83.3
*MMBT4124
350
2.8
200 357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT4124
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 10 µA, IE = 0
IC = 10 µA, IC = 0
VCB = 20 V, IE = 0
VEB = 3.0 V, IC = 0
25 V
30 V
5.0 V
50 nA
50 nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 2.0 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 50 mA, IB = 5.0 mA
IC = 50 mA, IB = 5.0 mA
120 360
60
0.3
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
300
MHz
Cobo
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.0 pF
Cibo Input Capacitance
VBE = 0.5 V, IC = 0,
f = 1.0 kHz
8.0 pF
Ccb Collector-Base Capcitance
VCB = 5.0 V, IE = 0,
f = 100 kHz
4.0 pF
hfe Small-Signal Current Gain
VCE = 10 V, IC = 2.0 mA,
f = 1.0 kHz
120 480
NF Noise Figure
IC = 100 µA, VCE = 5.0 V,
RS =1.0k, f=10 Hz to 15.7 kHz
5.0 dB
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%


Features 2N4124 / MMBT4124 Discrete POWER & Sign al Technologies 2N4124 MMBT4124 C E C BE TO-92 SOT-23 Mark: ZC B NPN Gen eral Purpose Amplifier This device is d esigned as a general purpose amplifier and switch. The useful dynamic range ex tends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Proce ss 23. See 2N3904 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter -Base Voltage Collector Current - Conti nuous TA = 25°C unless otherwise note d Parameter Value 25 30 5.0 200 -55 t o +150 Units V V V mA °C Operating a nd Storage Junction Temperature Range *These ratings are limiting values abov e which the serviceability of any semic onductor device may be impaired. NOTES: 1) These ratings are based on a maximu m junction temperature of 150 degrees C . 2) These are steady state limits. The factory should be consulted on applica tions involving pulsed or low duty cycle operations. Thermal Cha.
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