MMBT4258 Switching Transistor Datasheet

MMBT4258 Datasheet, PDF, Equivalent


Part Number

MMBT4258

Description

PNP Switching Transistor

Manufacture

Fairchild

Total Page 6 Pages
Datasheet
Download MMBT4258 Datasheet


MMBT4258
Discrete POWER & Signal
Technologies
PN4258
MMBT4258
C
C
BE
TO-92
SOT-23
Mark: 78
E
B
PNP Switching Transistor
This device is designed for very high speed saturate switching
at collector currents to 100 mA. Sourced from Process 65.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
12
VCBO
Collector-Base Voltage
12
VEBO
Emitter-Base Voltage
4.5
IC Collector Current - Continuous
200
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN4258
350
2.8
125
357
*MMBT4258
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT4258
PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage*
VCEO(sus)
Collector-Emitter Sustaining Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICES Collector Cutoff Current
IC = 100 µA, VBE = 0
IC = 3.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 6.0 V, VBE = 0
VCE = 6.0 V, VBE = 0, TA = 65°C
12
12
12
4.5
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(s at)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 0.5 V
IC = 10 mA, VCE = 3.0 V
IC = 50 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cibo Input Capacitance
Ccb Collector-Base Capacitance
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
IC = 10 mA, VCE = 10 V,
f = 100 MHz
VBE = 0.5 V, IC = 0,
f = 1.0 MHz
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
15
30
30
0.75
700
700
SWITCHING CHARACTERISTICS
ton Turn-On Time
td Delay Time
tr Rise Time
toff Turn-Off Time
ts Storage Time
tf Fall Time
ts Storage Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCC = 1.5 V, VBE(off) = 0 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 1.5 V, IC = 10mA
IB1 = IB2 = 1.0 mA
IC = 10 mA, IB1 = IB2 = 10 mA
0.01
5.0
120
0.15
0.5
0.95
1.5
3.5
3.0
15
10
15
20
20
10
20
V
V
V
V
µA
µA
V
V
V
V
MHz
MHz
pF
pF
ns
ns
ns
ns
ns
ns
ns
Spice Model
PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0
Ikr=0 Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5
Vtf=3 Xtf=6 Rb=10)


Features PN4258 / MMBT4258 Discrete POWER & Sign al Technologies PN4258 MMBT4258 C E C B TO-92 E SOT-23 Mark: 78 B PNP S witching Transistor This device is desi gned for very high speed saturate switc hing at collector currents to 100 mA. S ourced from Process 65. Absolute Maxim um Ratings* Symbol VCEO VCBO VEBO IC TJ , Tstg Collector-Emitter Voltage Collec tor-Base Voltage Emitter-Base Voltage C ollector Current - Continuous TA = 25 C unless otherwise noted Parameter V alue 12 12 4.5 200 -55 to +150 Units V V V mA °C Operating and Storage Junc tion Temperature Range *These ratings are limiting values above which the ser viceability of any semiconductor device may be impaired. NOTES: 1) These ratin gs are based on a maximum junction temp erature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Devi.
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