MMBT4354 Purpose Amplifier Datasheet

MMBT4354 Datasheet, PDF, Equivalent


Part Number

MMBT4354

Description

PNP General Purpose Amplifier

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBT4354 Datasheet


MMBT4354
MMBT4354
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switch requiring collector currents to 500mA.
• Sourced from process 67.
• TN4033A for characteristics.
3
2
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1
SOT-23
Mark: 79
1. Base 2. Emitter 3. Collector
Value
-60
-60
-5.0
-800
- 55 ~ 150
Units
V
V
V
mA
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Sustaining Voltage *
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics *
IC = -1.0mA, IB = 0
IC = -10µA, IE = 0
IE = -10µA, IC = 0
VCB = -50V, IE = 0
VEB = -5.0V, VCE = 0
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = -5V, IC = -0.1mA
VCE = -5V, IC = -1.0mA
VCE = -5V, IC = -10mA
VCE = -5V, IC = -100mA
VCE = -5V, IC = -500mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
VCE = -0.5V, IC = -500mA
hfe Small Signal Current Gain
IC = -50mA, VCE = -10V,
f = 100MHz
NF Noise Figure
Switching Characteristics
VCE = -10V, IC = -100µA
RS = 1.0k, f = 1.0KHz,
BW = 1.0Hz
ton Turn-On Time
toff Turn-Off Time
* Pulse Test: Pulse Width 300µs, Duty Cycle 1.0%
IC = -500mA, VCC = -30V
IB1 = IB2 = -50mA
Min. Max. Units
-60 V
-60 V
-5.0 V
-50 nA
-10 µA
25
40
50 500
40
30
-0.15
-0.50
-0.9
-1.1
-1.1
V
V
V
V
V
1.0 5.0
2.0 dB
100 ns
400 ns
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003

MMBT4354
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003


Features MMBT4354 MMBT4354 PNP General Purpose A mplifier • This device is deisgned fo r use as general purpose amplifiers and switch requiring collector currents to 500mA. • Sourced from process 67. TN4033A for characteristics. 3 2 1 SOT-23 Mark: 79 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta =25°C unless otherwise noted Symbol VC EO VCBO VEBO IC TJ, TSTG Parameter Coll ector-Emitter Voltage Collector-Base Vo ltage Emitter-Base Voltage Collector Cu rrent - Continuous Operating and Storag e Junction Temperature Range Value -60 -60 -5.0 -800 - 55 ~ 150 Units V V V mA °C * These ratings are limiting valu es above which the serviceability of an y semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 de grees C. 2) These are steady state limi ts. The factory should be consulted on applications involving pulsed or low du ty cycle operations Electrical Charact eristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR.
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