Purpose Amplifier. MMBT4356 Datasheet


MMBT4356 Amplifier. Datasheet pdf. Equivalent


Part Number

MMBT4356

Description

PNP General Purpose Amplifier

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBT4356 Datasheet


MMBT4356
MMBT4356
PNP General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA.
• Sourced from process 67.
• See TN4033A for characteristics.
3
2
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector current
- Continuous
TJ, Tstg
Operating and Storate Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
SOT-23
1 Mark: 82
1. Base 2. Emitter 3. Collector
Value
-80
-80
-5.0
-800
-55 ~ +150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
°PD Total Device Dissipation
Derate above 25 C
RθJA
Thermal Resistance, Junction to Ambient
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

MMBT4356
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBS
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = -10mA, IB = 0
IC = -10µA, IE = 0
IC = -10µA, IC = 0
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 75°C
VCB = -50V, IE = 0
VEB = -4.0V, IC = 0
-80
-80
-5.0
-50
-5.0
-50
-100
V
V
V
nA
µA
nA
µA
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = -10V, IC = -100µA
VCE = -10V, IC = -1.0mA
VCE = -10V, IC = -10mA
VCE = -10V, IC = -100mA
VCE = -10V, IC = -500mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
25
40
50
40
30
250
-0.15
-0.5
-0.9
-1.1
V
V
V
V
Cob Output Capacitance
Cib Input Capacitance
hfe Small-Signal Current Gain
VCB = -10V, f = 1MHz
VBE = -0.5V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
1.0
30 pF
110 pF
5.0
NF Noise Figure
Switching Characteristics
VCE = -10V, IC = -100µA
RS = 1k, f = 1kHz
BW = 1Hz
3.0 dB
ton Turn-On Time
toff Turn-Off Time
* Pulse Test: Pulse Width 300µs, Duty 2.0%
VCC = -30V, IC = -500mA
IB1 = IB2 = -50mA
100 ns
400 ns
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002


Features MMBT4356 MMBT4356 PNP General Purpose A mplifier • This device is designed fo r use as general purpose amplifiers and switches requiring collector currents to 500mA. • Sourced from process 67. • See TN4033A for characteristics. 3 2 SOT-23 Mark: 82 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Rating s * TA=25°C unless otherwise noted Sym bol VCES VCBO VEBO IC TJ, Tstg Paramete r Collector-Emitter Voltage Collector-B ase Voltage Emitter-Base Voltage Collec tor current - Continuous Operating and Storate Junction Temperature Range Valu e -80 -80 -5.0 -800 -55 ~ +150 Units V V V mA °C * These ratings are limitin g values above which the serviceability of any semiconductor device may be imp aired NOTES: 1. These ratings are based on a maximum junction temperature of 1 50 degrees C. 2. These are steady state limits. The factory should be consulte d on applications involving pulsed or l ow duty cycle operations. Thermal Char acteristics TA=25°C unless otherwise noted Symbol PD RθJA Parameter Tot.
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