MMBT4400 Purpose Amplifier Datasheet

MMBT4400 Datasheet, PDF, Equivalent


Part Number

MMBT4400

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBT4400 Datasheet


MMBT4400
Discrete POWER & Signal
Technologies
2N4400
MMBT4400
C
C
BE
TO-92
SOT-23
Mark: 83
E
B
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
6.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N4400
625
5.0
83.3
200
*MMBT4400
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT4400
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICEX Collector Cutoff Current
IBL Emitter Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 35 V, VEB = 0.4 V
VCE = 35 V, VEB = 0.4 V
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 150 mA
VCE = 2.0 V, IC = 500 mA
IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB =15 mA
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
Cib Input Capacitance
hfe Small-Signal Current Gain
hfe Small-Signal Current Gain
hie Input Impedance
hre Voltage Feedback Ratio
hoe Output Admittance
VCB = 5.0 V, f = 140 kHz
VEB = 0.5 V, f = 140 kHz
IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCE = 10 V, IC = 1.0 mA,
f = 1.0 kHz
SWITCHING CHARACTERISTICS
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA ,VBE ( off ) = 0.0 V
VCC = 30 V, IC = 150 mA
IB1 = IB2 = 15 mA
40 V
60 V
6.0 V
0.1 µA
0.1 µA
20
40
50 150
20
0.40
0.75
0.75 0.95
1.2
V
V
V
V
6.5 pF
30 pF
2.0
20 250
0.5 7.5 K
0.1 8.0 x 10-4
1.0 30 µmhos
15 ns
20 ns
225 ns
30 ns


Features 2N4400 / MMBT4400 Discrete POWER & Sign al Technologies 2N4400 MMBT4400 C E C BE TO-92 SOT-23 Mark: 83 B NPN Gen eral Purpose Amplifier This device is d esigned for use as general purpose ampl ifiers and switches requiring collector currents to 500 mA. Sourced from Proce ss 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitte r Voltage Collector-Base Voltage Emitte r-Base Voltage Collector Current - Cont inuous TA = 25°C unless otherwise not ed Parameter Value 40 60 6.0 1.0 -55 to +150 Units V V V A °C Operating a nd Storage Junction Temperature Range *These ratings are limiting values abov e which the serviceability of any semic onductor device may be impaired. NOTES: 1) These ratings are based on a maximu m junction temperature of 150 degrees C . 2) These are steady state limits. The factory should be consulted on applica tions involving pulsed or low duty cycl e operations. Thermal Characteristics Symbol PD RθJC RθJA TA = .
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