MMBT4401 Purpose Amplifier Datasheet

MMBT4401 Datasheet, PDF, Equivalent


Part Number

MMBT4401

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 9 Pages
Datasheet
Download MMBT4401 Datasheet


MMBT4401
2N4401 / MMBT4401
NPN General-Purpose Amplifier
Description
This device is designed for use as a medium power
amplifier and switch requiring collector currents up to
500 mA.
November 2014
EBC
TO-92
Figure 1. 2N4401 Device Package
C
SOT-23
Mark:2X
E
B
Figure 2. MMBT4401 Device Package
Ordering Information
Part Number
2N4401BU
2N4401TF
2N4401TFR
2N4401TA
2N4401TAR
MMBT4401
Marking
2N4401
2N4401
2N4401
2N4401
2N4401
2X
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Packing Method
Bulk
Tape and Reel
Tape and Reel
Ammo
Ammo
Tape and Reel
© 2001 Fairchild Semiconductor Corporation
2N4401 / MMBT4401 Rev. 1.1.0
www.fairchildsemi.com

MMBT4401
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
600
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Total Device Dissipation
PD Derate Above 25°C
Max.
2N4401(3)
MMBT4401(4)
625 350
5.0 2.8
Unit
mW
mW/°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
83.3
200
°C/W
357 °C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
© 2001 Fairchild Semiconductor Corporation
2N4401 / MMBT4401 Rev. 1.1.0
2
www.fairchildsemi.com


Features 2N4401 / MMBT4401 — NPN General-Purpos e Amplifier 2N4401 / MMBT4401 NPN Gene ral-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring co llector currents up to 500 mA. Novembe r 2014 EBC TO-92 Figure 1. 2N4401 De vice Package C SOT-23 Mark:2X E B F igure 2. MMBT4401 Device Package Order ing Information Part Number 2N4401BU 2N 4401TF 2N4401TFR 2N4401TA 2N4401TAR MMB T4401 Marking 2N4401 2N4401 2N4401 2N4 401 2N4401 2X Package TO-92 3L TO-92 3 L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L Packing Method Bulk Tape and Reel Tape and Reel Ammo Ammo Tape and Reel © 2 001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fair childsemi.com 2N4401 / MMBT4401 — NP N General-Purpose Amplifier Absolute M aximum Ratings(1),(2) Stresses exceedi ng the absolute maximum ratings may dam age the device. The device may not func tion or be operable above the recommend ed operating conditions and stressing the parts to these levels is n.
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