MMBT4401LT1 Switching Transistor Datasheet

MMBT4401LT1 Datasheet, PDF, Equivalent


Part Number

MMBT4401LT1

Description

Switching Transistor

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT4401LT1 Datasheet


MMBT4401LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT4401LT1/D
Switching Transistor
NPN Silicon
COLLECTOR
3
MMBT4401LT1
Motorola Preferred Device
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4401LT1 = 2X
Symbol
VCEO
VCBO
VEBO
IC
Value
40
60
6.0
600
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
40 —
Vdc
60 —
Vdc
6.0 —
µAdc
— 0.1
µAdc
— 0.1
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT4401LT1
MMBT4401LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS(3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VEB = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min
20
40
80
100
40
0.75
250
1.0
0.1
40
1.0
Max Unit
300
Vdc
0.4
0.75
Vdc
0.95
1.2
MHz
pF
6.5
pF
30
k
15
X 10– 4
8.0
500
mmhos
30
15
ns
20
225
ns
30
+16 V
0
– 2.0 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 µs,
DUTY CYCLE 2.0%
< 2.0 ns
1.0 k
+ 30 V
200
CS* < 10 pF
+16 V
0
–14 V
1.0 to 100 µs,
DUTY CYCLE 2.0%
1.0 k
< 20 ns
+ 30 V
200
CS* < 10 pF
Figure 1. Turn–On Time
Scope rise time < 4.0 ns
– 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 2. Turn–Off Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT4401LT1/D S witching Transistor NPN Silicon COLLECT OR 3 1 BASE MMBT4401LT1 Motorola Prefe rred Device 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Volt age Collector Current — Continuous Sy mbol VCEO VCBO VEBO IC Value 40 60 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipatio n FR– 5 Board(1) TA = 25°C Derate ab ove 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alu mina Substrate,(2) TA = 25°C Derate ab ove 25°C Thermal Resistance, Junction to Ambient Junction and Storage Tempera ture Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +15 0 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT4401LT1 = 2X E LECTRICAL CHARACTERISTICS (TA = 25°C u nless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – .
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