Purpose Amplifier. MMBT4403 Datasheet


MMBT4403 Amplifier. Datasheet pdf. Equivalent


Part Number

MMBT4403

Description

PNP General Purpose Amplifier

Manufacture

Micro Commercial Components

Total Page 3 Pages
Datasheet
Download MMBT4403 Datasheet


MMBT4403
MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
MMBT4403
Features
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation
C
Pin Configuration
Top View
2T
BE
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Collector-Emitter Breakdown Voltage*
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100µAdc, IC=0)
Base Cutoff Current
(VCE=30Vdc, VBE=3.0Vdc)
Collector Cutoff Current
(VCE=30Vdc, VBE=3.0Vdc)
40 Vdc
40 Vdc
5.0 Vdc
0.1 µAdc
0.1 µAdc
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=150mAdc, VCE=2.0Vdc)
(IC=500mAdc, VCE=2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
30
60
100
100
20
0.75
300
0.4
0.75
0.95
1.30
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=20mAdc, VCE=10Vdc, f=100MHz)
200
MHz
Ccb Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
8.5 pF
Ceb Input Capacitance
(VEB=0.5Vdc, IC=0, f=1.0MHz)
30.0 pF
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, VBE=2.0Vdc
tr
Rise Time
IC=150mAdc, IB1=15mAdc)
ts Storage Time (VCC=3.0Vdc, IC=150mAdc
tf
Fall Time
IB1=IB2=15mAdc)
*Pulse Width 300µs, Duty Cycle 2.0%
15 ns
20 ns
225 ns
30 ns
PNP General
Purpose Amplifier
SOT-23
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com

MMBT4403
MMBT4403
DC Current Gain vs Collector Current
300
VCE = 10V
250
200
hFE
150
100
50
0.1 1 10 100
IC (mA)
Pulsed Base Saturation
Volatge vs Collector Current
-1.5
IC/IB = 10
-1.3
-1.1
VBE(SAT)
-
(V)
-0.9
-0.7
-0.5
0
-1.0
-10 -100
IC - (mA)
-1000
MCC
Base-Emitter ON Voltage vs
Collector Current
1.2
VCE = 5.0V
1.0
0.8
VBE(ON) - (V)
TA = 25°C
0.6
0.4 TA = 100°C
0.2
0
0.1 1.0
10
IC - (mA)
Pulsed Collector Saturation
Voltage vs Collector Current
-.5
IC/IB = 10
100
-.1
VCE(SAT) - (V)
-.05
-.02
-1.0
-10 -100
IC - (mA)
-1000
Collector Reverse Current vs
Reverse Bias Voltage
100
0
100
ICES - (µA)
10
Input and Output Capacitances vs
Reverse Bias Voltage
20
TA = 25°C
TA = 25°C
16
CIBO
12
pF
8 COBO
4
1.0
0
-10 -20 -30 -40 -50
VCE - (V)
-60
0
-0.1 -1.0
-10
Volts - (V)
www.mccsemi.com


Features MCC Features • •    omponents 21201 Itasca Street Chatswort h    !"# $ %    !"# MMBT4403 Surface M ount SOT-23 Package Capable of 350mWatt s of Power Dissipation C Pin Configurat ion Top View PNP General Purpose Ampli fier SOT-23 A D 2T B E Electrical Cha racteristics @ 25°C Unless Otherwise S pecified Symbol Parameter Collector-Emi tter Breakdown Voltage* (I C=1.0mAdc, I B=0) Collector-Base Breakdown Voltage ( I C=100µ Adc, IE=0) Emitter-Base Break down Voltage (I E=100µ Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, V BE=3.0Vdc) DC Current Gain* (I C=0.1mAd c, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc ) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc , VCE=2.0Vdc) (I C=500mAdc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage ( I C=150mAdc, IB=15mAdc) (I C=500mAdc, I B=50mAdc) Base-Emitter Saturation Volta ge (I C=150mAdc, IB=15mAdc) (I C=500mAd c, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f.
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