MMBT4403LT1 Switching Transistor Datasheet

MMBT4403LT1 Datasheet, PDF, Equivalent


Part Number

MMBT4403LT1

Description

Switching Transistor

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT4403LT1 Datasheet


MMBT4403LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT4403LT1/D
Switching Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBT4403LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4403LT1 = 2T
Symbol
VCEO
VCBO
VEBO
IC
Value
–40
–40
–5.0
–600
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
Collector Cutoff Current
(VCE = –35 Vdc, VEB = –0.4 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
–40 —
Vdc
–40 —
–5.0 —
Vdc
µAdc
— –0.1
µAdc
— –0.1
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT4403LT1
MMBT4403LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)(3)
(IC = –500 mAdc, VCE = –2.0 Vdc)(3)
Collector – Emitter Saturation Voltage(3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = –30 Vdc, VEB = –2.0 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
Storage Time
Fall Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min
30
60
100
100
20
–0.75
200
1.5
0.1
60
1.0
Max Unit
300
–0.4
–0.75
–0.95
–1.3
Vdc
Vdc
MHz
pF
8.5
pF
30
k
15
X 10– 4
8.0
500
mmhos
100
15
ns
20
225
ns
30
+2 V
0
– 16 V
SWITCHING TIME EQUIVALENT TEST CIRCUIT
< 2 ns
1.0 k
10 to 100 µs,
DUTY CYCLE = 2%
– 30 V
200
< 20 ns
+14 V
CS* < 10 pF
0
–16 V
1.0 k
1.0 to 100 µs,
Scope rise time < 4.0 ns
DUTY CYCLE = 2% + 4.0 V
*Total shunt capacitance of test jig connectors, and oscilloscope
– 30 V
200
CS* < 10 pF
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT4403LT1/D S witching Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT4403LT1 Motorola Pref erred Device MAXIMUM RATINGS Rating Co llector – Emitter Voltage Collector Base Voltage Emitter – Base Voltag e Collector Current — Continuous Symb ol VCEO VCBO VEBO IC Value –40 –40 –5.0 –600 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYL E 6 SOT– 23 (TO – 236AB) THERMAL C HARACTERISTICS Characteristic Total Dev ice Dissipation FR– 5 Board(1) TA = 2 5°C Derate above 25°C Thermal Resista nce, Junction to Ambient Total Device D issipation Alumina Substrate,(2) TA = 2 5°C Derate above 25°C Thermal Resista nce, Junction to Ambient Junction and S torage Temperature Symbol PD Max 225 1. 8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT4 403LT1 = 2T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collec.
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