MMBT5087 Purpose Amplifier Datasheet

MMBT5087 Datasheet, PDF, Equivalent


Part Number

MMBT5087

Description

PNP General Purpose Amplifier

Manufacture

Fairchild

Total Page 9 Pages
Datasheet
Download MMBT5087 Datasheet


MMBT5087
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
3
1 TO-92
1. Emitter 2. Base 3. Collector
2
1
SOT-23
Mark: 2Q
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector current
- Continuous
TJ, Tstg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°C
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
ICEO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Collector Cutoff Current
ICBO
Emitter Cutoff Current
On Characteristics
IC = -1.0mA, IB = 0
IC = -100µA, IE = 0
VCB = -10V, IE = 0
VCB = -35V, IE = 0
VEB = -3.0V, IC = 0
hFE DC Current Gain
IC = -100µA, VCE = -5.0V
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
5086
5087
5086
5087
5086
5087
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = -10mA, IB = -1.0mA
IC = -1.0mA, VCE = -5.0V
fT
Current Gain Bandwidth Product
IC = -500µA, VCE = -5.0V, f = 20MHz
Ccb Collector-Base Capacitance
VCB = -5.0V, IE = 0, f = 100KHz
hfe Small-Signal Current Gain
IC = -1.0mA, VCE = -5.0V,
f = 1.0KHz
5086
5087
NF Noise Figure
IC = -100µA, VCE = -5.0V
RS = 3.0k, f = 1.0KHz
5086
5087
Min.
-50
-50
150
250
150
250
150
250
40
150
250
Max.
-10
-50
-50
500
800
-0.3
-0.85
4.0
600
900
3.0
2.0
Units
V
V
nA
nA
nA
V
V
MHz
pF
dB
dB
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
IC = -20µA, VCE = -5.0V
RS = 10k
f = 10Hz to 15.7KHz
5086
5087
3.0 dB
2.0 dB
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003

MMBT5087
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
2N5086
2N5087
625
5.0
83.3
200
Max.
*MMBT5087
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003


Features 2N5086/2N5087/MMBT5087 2N5086/2N5087/MM BT5087 PNP General Purpose Amplifier This device is designed for low level , high gain, low noise general purpose amplifier applications at collector cur rents to 50mA. 1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 2Q 1 . Base 2. Emitter 3. Collector Absolut e Maximum Ratings* Ta=25°C unless othe rwise noted Symbol VCEO VCBO VEBO IC TJ , Tstg Parameter Collector-Emitter Volt age Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value -50 -50 -3.0 -100 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impa ired. NOTES: 1. These ratings are based on a maximum junction temperature of 1 50 degrees C. 2. These are steady state limits. The factory should be consulte d on applications involving pulsed or l ow duty cycle operations. Electrical C haracteristics Ta=25°C unless otherwise noted Symbol Parameter Test.
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