MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5087LT1/D
Low Noise Transistor
PNP Silicon
1 BASE
C...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5087LT1/D
Low Noise
Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBT5087LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –50 –50 –3.0 –50
2 EMITTER Unit Vdc Vdc Vdc mAdc
1 2
3
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBT5087LT1 = 2Q
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) (VCB = –35 Vdc, IE = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO ICBO — — –10 –50 –50 –50 — — Vdc Vdc nAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal
Transistors, ...