Amplifier. MMBT5088 Datasheet

MMBT5088 Datasheet. Purpose Amplifier.


Part Number

MMBT5088

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 6 Pages
Datasheet
Download MMBT5088 Datasheet


MMBT5088
Discrete POWER & Signal
Technologies
2N5088
2N5089
MMBT5088
MMBT5089
C
C
BE
TO-92
SOT-23
Mark: 1Q / 1R
B
E
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
2N5088
2N5089
2N5088
2N5089
30
25
35
30
4.5
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5088
2N5089
625
5.0
83.3
*MMBT5088
*MMBT5089
350
2.8
200 357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT5088
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCB = 20 V, IE = 0
VCB = 15 V, IE = 0
VEB = 3.0 V, IC = 0
VEB = 4.5 V, IC = 0
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
30
25
35
30
50
50
50
100
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
DC Current Gain
IC = 100 µA, VCE = 5.0 V 2N5088
300
900
2N5089 400
1200
IC = 1.0 mA, VCE = 5.0 V 2N5088
350
2N5089 450
IC = 10 mA, VCE = 5.0 V* 2N5088
300
2N5089 400
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
0.5
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
0.8
V
V
V
V
nA
nA
nA
nA
V
V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Ccb Collector-Base Capacitance
Ceb Emitter-Base Capacitance
hfe Small-Signal Current Gain
NF Noise Figure
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 500 µA,VCE = 5.0 mA,
f = 20 MHz
VCB = 5.0 V, IE = 0, f = 100 kHz
VBE = 0.5 V, IC = 0, f = 100 kHz
IC = 1.0 mA, VCE = 5.0 V, 2N5088
f = 1.0 kHz
2N5089
IC = 100 µA, VCE = 5.0 V, 2N5088
RS = 10 k,
2N5089
f = 10 Hz to 15.7 kHz
50
350
450
4.0
10
1400
1800
3.0
2.0
MHz
pF
pF
dB
dB
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271
Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n
Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)


Features 2N5088 / MMBT5088 / 2N5089 / MMBT5089 D iscrete POWER & Signal Technologies 2N 5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is designed for low noise, high gain, g eneral purpose amplifier applications a t collector currents from 1µA to 50 mA . Sourced from Process 07. Absolute Ma ximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Col lector-Base Voltage Emitter-Base Voltag e Collector Current - Continuous TA = 25°C unless otherwise noted Parameter 2N5088 2N5089 2N5088 2N5089 Value 30 25 35 30 4.5 100 -55 to +150 Units V V V V V mA °C Operating and Storage Ju nction Temperature Range *These rating s are limiting values above which the s erviceability of any semiconductor devi ce may be impaired. NOTES: 1) These rat ings are based on a maximum junction te mperature of 150 degrees C. 2) These ar e steady state limits. The factory shou ld be consulted on applications involving pulsed or low duty cycle.
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