Noise Transistors. MMBT5088LT1 Datasheet


MMBT5088LT1 Transistors. Datasheet pdf. Equivalent


MMBT5088LT1


Low Noise Transistors
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMBT5088LT1/D

Low Noise Transistors
NPN Silicon
1 BASE

COLLECTOR 3

MMBT5088LT1 MMBT5089LT1*
*Motorola Preferred Device

MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50

2 EMITTER
1

3

5089LT1 25 30

Unit Vdc Vdc Vdc mAdc

2

CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C

DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MM...



MMBT5088LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT5088LT1/D
Low Noise Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT5088LT1
MMBT5089LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol 5088LT1 5089LT1 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30 25
35 30
4.5
50
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MMBT5088
MMBT5089
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5088
MMBT5089
V(BR)CBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBT5088
MMBT5089
MMBT5088
MMBT5089
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
30 —
25 —
Vdc
35 —
30 —
nAdc
— 50
— 50
nAdc
— 50
— 100
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT5088LT1
MMBT5088LT1 MMBT5089LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
Symbol
hFE
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz)
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
VCE(sat)
VBE(sat)
fT
Ccb
Ceb
hfe
NF
Min
300
400
350
450
300
400
50
350
450
Max
900
1200
0.5
0.8
4.0
10
1400
1800
3.0
2.0
Unit
Vdc
Vdc
MHz
pF
pF
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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