MMBT5088LT1 Noise Transistors Datasheet

MMBT5088LT1 Datasheet, PDF, Equivalent


Part Number

MMBT5088LT1

Description

Low Noise Transistors

Manufacture

ON

Total Page 8 Pages
Datasheet
Download MMBT5088LT1 Datasheet


MMBT5088LT1
ON Semiconductort
Low Noise Transistors
NPN Silicon
MMBT5088LT1
MMBT5089LT1
MMBT5089LT1 is a Preferred Device
MAXIMUM RATINGS
Rating
Symbol 5088LT1 5089LT1 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30 25
35 30
4.5
50
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
PD
RqJA
TJ, Tstg
556
300
www.DataShe2et.44U.com
417
–55 to +150
°C/W
mW
mW/°C
°C/W
°C
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MMBT5088
MMBT5089
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5088
MMBT5089
V(BR)CBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MMBT5088
MMBT5089
MMBT5088
MMBT5089
ICBO
IEBO
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AF)
COLLECTOR
3
1
BASE
2
EMITTER
Min Max Unit
Vdc
30 —
25 —
Vdc
35 —
30 —
nAdc
— 50
— 50
nAdc
— 50
— 100
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
1
Publication Order Number:
MMBT5088LT1/D

MMBT5088LT1
MMBT5088LT1 MMBT5089LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
hFE
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz)
MMBT5088
MMBT5089
VCE(sat)
VBE(sat)
MMBT5088
MMBT5089
MMBT5088
MMBT5089
fT
Ccb
Ceb
hfe
NF
Min
300
400
350
450
300
400
50
350
450
Max
900
1200
0.5
0.8
4.0
10
1400
1800
3.0
2.0
Unit
Vdc
Vdc
MHz
pF
pF
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2


Features ON Semiconductort Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1 M MBT5089LT1 is a Preferred Device 3 MA XIMUM RATINGS Rating Collector–Emitte r Voltage Collector–Base Voltage Emit ter–Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 5 088LT1 30 35 4.5 50 5089LT1 25 30 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318–08, ST YLE 6 SOT–23 (TO–236AF) COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERIST ICS Characteristic Total Device Dissipa tion FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junctio n to Ambient Total Device Dissipation A lumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junctio n to Ambient Junction and Storage Tempe rature Symbol PD Max 225 1.8 RqJA PD 55 6 300 www.DataSheet4U.com Unit mW mW/ C °C/W mW mW/°C °C/W °C 2.4 RqJA TJ, Tstg 417 –55 to +150 DEVICE MA RKING MMBT5088LT1 = 1Q; MMBT5089LT1 = 1 R ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collecto.
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