ON Semiconductort
Low Noise Transistors
NPN Silicon
MMBT5088LT1 MMBT5089LT1
MMBT5089LT1 is a Preferred Device
3
MAXI...
ON Semiconductort
Low Noise
Transistors
NPN Silicon
MMBT5088LT1 MMBT5089LT1
MMBT5089LT1 is a Preferred Device
3
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50 5089LT1 25 30 Unit Vdc Vdc Vdc mAdc
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AF) COLLECTOR 3 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300
www.DataSheet4U.com
Unit mW mW/°C °C/W mW mW/°C °C/W °C
2.4
RqJA TJ, Tstg
417 –55 to +150
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 ICBO MMBT5088 MMBT5089 IEBO MMBT5088 MMBT5089 — — 50 100 — — 50 50 nAdc 35 30 — — nAdc 30 25 — — Vdc V...