Noise Transistors. MMBT5089LT1 Datasheet


MMBT5089LT1 Transistors. Datasheet pdf. Equivalent


MMBT5089LT1


Low Noise Transistors
ON Semiconductort

Low Noise Transistors
NPN Silicon

MMBT5088LT1 MMBT5089LT1
MMBT5089LT1 is a Preferred Device

3

MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50 5089LT1 25 30 Unit Vdc Vdc Vdc mAdc
1 2

CASE 318–08, STYLE 6 SOT–23 (TO–236AF) COLLECTOR 3 1 BASE 2 EMITTER

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300
www.DataSheet4U.com

Unit mW mW/°C °C/W mW mW/°C °C/W °C

2.4

RqJA TJ, Tstg

417 –55 to +150

DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR–5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 IC...



MMBT5089LT1
ON Semiconductort
Low Noise Transistors
NPN Silicon
MMBT5088LT1
MMBT5089LT1
MMBT5089LT1 is a Preferred Device
MAXIMUM RATINGS
Rating
Symbol 5088LT1 5089LT1 Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30 25
35 30
4.5
50
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
PD
RqJA
TJ, Tstg
556
300
www.DataShe2et.44U.com
417
–55 to +150
°C/W
mW
mW/°C
°C/W
°C
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MMBT5088
MMBT5089
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5088
MMBT5089
V(BR)CBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
1. FR–5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
MMBT5088
MMBT5089
MMBT5088
MMBT5089
ICBO
IEBO
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AF)
COLLECTOR
3
1
BASE
2
EMITTER
Min Max Unit
Vdc
30 —
25 —
Vdc
35 —
30 —
nAdc
— 50
— 50
nAdc
— 50
— 100
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
1
Publication Order Number:
MMBT5088LT1/D

MMBT5089LT1
MMBT5088LT1 MMBT5089LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
hFE
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5088
MMBT5089
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz)
MMBT5088
MMBT5089
VCE(sat)
VBE(sat)
MMBT5088
MMBT5089
MMBT5088
MMBT5089
fT
Ccb
Ceb
hfe
NF
Min
300
400
350
450
300
400
50
350
450
Max
900
1200
0.5
0.8
4.0
10
1400
1800
3.0
2.0
Unit
Vdc
Vdc
MHz
pF
pF
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)