MPS5179 / MMBT5179 / PN5179
Discrete POWER & Signal Technologies
MPS5179
MMBT5179
C
PN5179
E C B
TO-92
E
SOT-23
M...
MPS5179 / MMBT5179 / PN5179
Discrete POWER & Signal Technologies
MPS5179
MMBT5179
C
PN5179
E C B
TO-92
E
SOT-23
Mark: 3C
B
C
E
TO-92
B
NPN RF
Transistor
This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
12 20 2.5 50 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
PN/MPS5179 350 2.8 357 *MMBT5179 225 1.8 556
Units
mW mW/°C °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation
5179, Rev B
MPS5179 / MMBT5179 / PN5179
NPN RF
Transistor
(continued)
Electrical Characteristics
Symbol Para...