MMBT5179 RF Transistor Datasheet

MMBT5179 Datasheet, PDF, Equivalent


Part Number

MMBT5179

Description

NPN RF Transistor

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBT5179 Datasheet


MMBT5179
Discrete POWER & Signal
Technologies
MPS5179
MMBT5179
PN5179
C
C
BE
TO-92
SOT-23
Mark: 3C
E
B
C
EB
TO-92
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers
with collector currents in the 100 µA to 30 mA range in common
emitter or common base mode of operation, and in low frequency
drift, high ouput UHF oscillators. Sourced from Process 40.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
12
VCBO
Collector-Base Voltage
20
VEBO
Emitter-Base Voltage
2.5
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN/MPS5179
350
2.8
357
*MMBT5179
225
1.8
556
Units
mW
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation
5179, Rev B

MMBT5179
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
OFF CHARACTERISTICS
VCEO(sus)
V(BR)CBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IC = 3.0 mA, IB = 0
IC = 1.0 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 15 V, IE = 0
VCB = 15 V, TA = 150°C
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 3.0 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 10 mA, IB = 1.0 mA
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Ccb Collector-Base Capacitance
hfe Small-Signal Current Gain
rb’Cc
Collector Base Time Constant
NF Noise Figure
FUNCTIONAL TEST
Gpe Amplifier Power Gain
PO Power Output
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 5.0 mA, VCE = 6.0 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 0.1 to 1.0 MHz
IC = 2.0 mA, VCE = 6.0 V,
f = 1.0 kHz
IC = 2.0 mA, VCB = 6.0 V,
f = 31.9 MHz
IC = 1.5 mA, VCE = 6.0 V,
RS = 50, f = 200 MHz
VCE = 6.0 V, IC = 5.0 mA,
f = 200 MHz
VCB = 10 V, IE = 12 mA,
f 500 MHz
NPN RF Transistor
(continued)
Min Max Units
12 V
20 V
2.5 V
0.02 µA
1.0 µA
25 250
0.4
1.0
V
V
900
2000
MHz
1.0 pF
25 300
3.0 14 ps
5.0 dB
15 dB
20 mW
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)


Features MPS5179 / MMBT5179 / PN5179 Discrete PO WER & Signal Technologies MPS5179 MMB T5179 C PN5179 E C B TO-92 E SOT-23 Mark: 3C B C E TO-92 B NPN RF Tra nsistor This device is designed for use in low noise UHF/VHF amplifiers with c ollector currents in the 100 µA to 30 mA range in common emitter or common ba se mode of operation, and in low freque ncy drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maxi mum Ratings* Symbol VCEO VCBO VEBO IC T J, Tstg Collector-Emitter Voltage Colle ctor-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25 °C unless otherwise noted Parameter Value 12 20 2.5 50 -55 to +150 Units V V V mA °C Operating and Storage Junc tion Temperature Range *These ratings are limiting values above which the ser viceability of any semiconductor device may be impaired. NOTES: 1) These ratin gs are based on a maximum junction temp erature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applicatio.
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