MMBT5401 Purpose Amplifier Datasheet

MMBT5401 Datasheet, PDF, Equivalent


Part Number

MMBT5401

Description

PNP General Purpose Amplifier

Manufacture

Fairchild

Total Page 7 Pages
Datasheet
Download MMBT5401 Datasheet


MMBT5401
November 2014
MMBT5401
PNP Epitaxial Silicon Transistor
Features
• PNP General-Purpose Amplifier
• This device is designed as a general-purpose amplifier
and switch for applications requiring high voltage.
C
E
B SOT-23
Ordering Information
Part Number
MMBT5401
MMBT5401_D87Z
Marking
2L
2L
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel, 3000 pcs, 7 inch Reel
Tape and Reel, 10000 pcs, 13 inch Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-150
-160
-5.0
-600
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2004 Fairchild Semiconductor Corporation
MMBT5401 Rev. 1.1.0
www.fairchildsemi.com

MMBT5401
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
PD
RθJA
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
350 mW
2.8 mW/°C
357 °C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
NF
Parameter
Conditions
Collector-Emitter Breakdown Voltage(4) IC = -1.0 mA, IB = 0
Collector-Base Breakdown Voltage
IC = -100 μA, IE = 0
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
Collector Cut-Off Current
VCB = -120 V, IE = 0
VCB = -120 V, IE = 0,
TA = 100°C
Emitter Cut-Off Current
VEB = -3.0 V, IC = 0
DC Current Gain(4)
IC = -0.1 mA, VCE = -5.0 V
IC = -10 mA, VCE = -5.0 V
IC = -50 mA, VCE = -5.0 V
Collector-Emitter Saturation Voltage(4) IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
Base-Emitter Saturation Voltage(4)
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
Current Gain Bandwidth Product
IC = -10 mA, VCE = -10 V,
f = 100 MHz
Output Capacitance
VCB = -10 V, IE = 0,
f = 1 MHz
Noise Figure
IC = -250 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
Note:
4. Pulse test: Pulse width 300 μs, duty cycle 2%
Min.
-150
-160
-5.0
50
60
50
100
Max.
-50
-50
-50
Unit
V
V
V
nA
μA
nA
240
-0.2
V
-0.5
-1.0
V
-1.0
300 MHz
6.0 pF
8.0 dB
© 2004 Fairchild Semiconductor Corporation
MMBT5401 Rev. 1.1.0
2
www.fairchildsemi.com


Features MMBT5401 — PNP Epitaxial Silicon Trans istor November 2014 MMBT5401 PNP Epit axial Silicon Transistor Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high voltage. C E B SOT-23 Ordering Information Part Number MMBT5 401 MMBT5401_D87Z Marking 2L 2L Packa ge SOT-23 3L SOT-23 3L Packing Method Tape and Reel, 3000 pcs, 7 inch Reel Ta pe and Reel, 10000 pcs, 13 inch Reel A bsolute Maximum Ratings(1),(2) Stresse s exceeding the absolute maximum rating s may damage the device. The device may not function or be operable above the recommended operating conditions and st ressing the parts to these levels is no t recommended. In addition, extended ex posure to stresses above the recommende d operating conditions may affect devic e reliability. The absolute maximum rat ings are stress ratings only. Values ar e at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, TSTG C.
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