MMBT5401LT1 Voltage Transistor Datasheet

MMBT5401LT1 Datasheet, PDF, Equivalent


Part Number

MMBT5401LT1

Description

High Voltage Transistor

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBT5401LT1 Datasheet


MMBT5401LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT5401LT1/D
High Voltage Transistor
PNP Silicon
COLLECTOR
3
1
BASE
MMBT5401LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT5401LT1 = 2L
Symbol
VCEO
VCBO
VEBO
IC
Value
–150
–160
–5.0
–500
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –120 Vdc, IE = 0)
(VCB = –120 Vdc, IE = 0, TA = 100°C)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
–150
–160
–5.0
Vdc
Vdc
Vdc
–50 nAdc
–50 µAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT5401LT1
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –50 mAdc, VCE = –5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
50
60
50
240
Vdc
–0.2
–0.5
Vdc
–1.0
–1.0
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Small Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz)
fT MHz
100 300
Cobo
pF
— 6.0
hfe —
40 200
NF dB
— 8.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5401LT1/D H igh Voltage Transistor PNP Silicon 1 BA SE COLLECTOR 3 MMBT5401LT1 Motorola P referred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collecto r – Base Voltage Emitter – Base Vol tage Collector Current — Continuous S ymbol VCEO VCBO VEBO IC Value –150 160 –5.0 –500 2 EMITTER 1 3 Uni t Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THER MAL CHARACTERISTICS Characteristic Tota l Device Dissipation FR– 5 Board(1) T A = 25°C Derate above 25°C Thermal Re sistance, Junction to Ambient Total Dev ice Dissipation Alumina Substrate,(2) T A = 25°C Derate above 25°C Thermal Re sistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 2 25 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tst g 417 – 55 to +150 Unit mW mW/°C °C /W mW mW/°C °C/W °C DEVICE MARKING MMBT5401LT1 = 2L ELECTRICAL CHARACTERI STICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS C.
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