MMBT5551 Purpose Amplifier Datasheet

MMBT5551 Datasheet, PDF, Equivalent


Part Number

MMBT5551

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 10 Pages
Datasheet
Download MMBT5551 Datasheet


MMBT5551
August 2018
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers.
2N5551
TO-92
Ordering Information
Part Number
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
MMBT5551
Top Mark
5551
5551
5551
5551
3S
MMBT5551
3
2
1 SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Packing Method
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 2
1
www.onsemi.com

MMBT5551
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
TJ, Tstg(2)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current - Continuous
Junction and Storage Temperature
160
180
6
600
-55 to +150
V
V
V
mA
°C
Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJC
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum
2N5551
MMBT5551
625 350
5.0 2.8
83.3
200 357
Units
mW
mW/°C
°C/W
°C/W
© 2009 Semiconductor Components Industries, LLC
2N5551 / MMBT5551 Rev. 2
2
www.onsemi.com


Features 2N5551 / MMBT5551 — NPN General-Purpos e Amplifier August 2018 2N5551 / MMBT5 551 NPN General-Purpose Amplifier Descr iption This device is designed for gene ral-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 TO-92 Ordering Information Part Numb er 2N5551TA 2N5551TFR 2N5551TF 2N5551BU MMBT5551 Top Mark 5551 5551 5551 5551 3S MMBT5551 3 2 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Packag e TO-92 3L TO-92 3L TO-92 3L TO-92 3L S OT-23 3L Packing Method Ammo Tape and Reel Tape and Reel Bulk Tape and Reel © 2009 Semiconductor Components Indust ries, LLC 2N5551 / MMBT5551 Rev. 2 1 www.onsemi.com 2N5551 / MMBT5551 — N PN General-Purpose Amplifier Absolute Maximum Ratings(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not functio n or be operable above the recommended operating conditions and stressing the parts to these levels is not recommende d. In addition, extended exposure to stresses above the recommended .
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