MMBT5551LT1 Voltage Transistors Datasheet

MMBT5551LT1 Datasheet, PDF, Equivalent


Part Number

MMBT5551LT1

Description

High Voltage Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBT5551LT1 Datasheet


MMBT5551LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT5550LT1
MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
140
160
6.0
600
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
MMBT5550
MMBT5551
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBT5550
MMBT5551
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
MMBT5550
MMBT5551
MMBT5550
MMBT5551
V(BR)EBO
ICBO
IEBO
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
140 —
160 —
Vdc
160 —
180 —
Vdc
6.0 —
— 100 nAdc
— 50
— 100 µAdc
— 50
nAdc
— 50
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT5551LT1
MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5550
MMBT5551
hFE —
60 —
80 —
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT5550
MMBT5551
60 250
80 250
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
VCE(sat)
VBE(sat)
20
30
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D H igh Voltage Transistors NPN Silicon 1 B ASE COLLECTOR 3 MMBT5550LT1 MMBT5551L T1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter V oltage Collector – Base Voltage Emitt er – Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600 2 EMITTER Unit V dc Vdc Vdc mAdc 1 2 3 CASE 318 – 08 , STYLE 6 SOT– 23 (TO – 236AB) THE RMAL CHARACTERISTICS Characteristic Tot al Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal R esistance, Junction to Ambient Total De vice Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal R esistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Ts tg 417 – 55 to +150 Unit mW mW/°C ° C/W mW mW/°C °C/W °C DEVICE MARKING MMBT5550LT1 = M1F; MMBT5551LT1 = G1 E LECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max.
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