MMBT5771 Switching Transistor Datasheet

MMBT5771 Datasheet, PDF, Equivalent


Part Number

MMBT5771

Description

PNP Switching Transistor

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBT5771 Datasheet


MMBT5771
Discrete POWER & Signal
Technologies
2N5771
MMBT5771
C
C
BE
TO-92
SOT-23
Mark: 3R
E
B
PNP Switching Transistor
This device is designed for very high speed saturate switching at
collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
15
15
VEBO
Emitter-Base Voltage
4.5
IC Collector Current - Continuous
200
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5771
350
2.8
125
357
*MMBT5771
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT5771
PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 3.0 mA, IB = 0
IC = 100 µA, VBE = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 8.0 V, IE = 0
VCE = 8.0 V, VBE = 0
VCE = 8.0 V, VBE = 0, TA= 125°C
VEB = 4.5 V, IC = 0
15
15
15
4.5
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 0.5 V
IC = 10 mA, VCE = 0.3 V
IC = 10mA,VCE = 0.3V,TA = -55°C
IC = 50 mA, VCE = 1.0 V
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
35
50
20
40
0.75
SMALL SIGNAL CHARACTERISTICS
Ccb Collector-Base Capacitance
Ceb Emitter-Base Capacitance
hfe Small-Signal Current Gain
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 10 mA, VCE = 10 V,
f = 100 MHz
8.5
SWITCHING CHARACTERISTICS
ts Storage Time
ton Turn-On Time
toff Turn-Off Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
IC = 10 mA, VCC = 1.5 V,
IB = 1.0 mA
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
10
10
5.0
1.0
120
0.15
0.18
0.6
0.8
0.95
1.5
3.0
3.5
20
15
20
V
V
V
V
nA
nA
µA
µA
V
V
V
V
V
V
pF
pF
MHz
ns
ns
ns


Features 2N5771 / MMBT5771 Discrete POWER & Sign al Technologies 2N5771 MMBT5771 C E C BE TO-92 SOT-23 Mark: 3R B PNP Swi tching Transistor This device is design ed for very high speed saturate switchi ng at collector currents to 100 mA. Sou rced from Process 65. See PN4258 for ch aracteristics. Absolute Maximum Rating s* Symbol VCEO VCBO VEBO IC TJ, Tstg Co llector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 1 5 4.5 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temp erature Range *These ratings are limit ing values above which the serviceabili ty of any semiconductor device may be i mpaired. NOTES: 1) These ratings are ba sed on a maximum junction temperature o f 150 degrees C. 2) These are steady st ate limits. The factory should be consu lted on applications involving pulsed o r low duty cycle operations. Thermal C haracteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise no.
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