MMBT589LT1 Switching Transistor Datasheet

MMBT589LT1 Datasheet, PDF, Equivalent


Part Number

MMBT589LT1

Description

High Current Surface Mount PNP Silicon Switching Transistor

Manufacture

ON

Total Page 5 Pages
Datasheet
Download MMBT589LT1 Datasheet


MMBT589LT1
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MMBT589LT1
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
ICM
Value
−30
−50
−5.0
−1.0
−2.0
Unit
Vdc
Vdc
Vdc
Adc
A
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
310
2.5
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
403 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
710 mW
5.7 mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
RqJA
176 °C/W
Total Device Dissipation (Ref. Figure 8)
(Single Pulse < 10 sec.)
PDsingle
575
mW
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
http://onsemi.com
30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
MARKING DIAGRAM
G3 M G
G
1
G3 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT589LT1
SOT−23 3,000 / Tape & Reel
MMBT589LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 4
1
Publication Order Number:
MMBT589LT1/D

MMBT589LT1
MMBT589LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
Collector−Emitter Cutoff Current
(VCES = −30 Vdc)
Emitter Cutoff Current
(VEB = −4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3) (Figure 1)
(IC = −1.0 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = 2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3) (Figure 3)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = 0.1 A)
(IC = −2.0 A, IB = −0.2 A)
Base −Emitter Saturation Voltage (Note 3) (Figure 2)
(IC = −1.0 A, IB = −0.1 A)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Output Capacitance
(f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
−30
−50
−5.0
Max
−0.1
−0.1
−0.1
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
hFE
100 −
100 300
80 −
40 −
VCE(sat)
− −0.25
− −0.30
− −0.65
VBE(sat)
−1.2
V
V
VBE(on)
−1.1
V
fT 100 − MHz
Cobo
15 pF
http://onsemi.com
2


Features www.DataSheet4U.com MMBT589LT1 High Cur rent Surface Mount PNP Silicon Switchin g Transistor for Load Management in Por table Applications Features http://ons emi.com • Pb−Free Packages are Ava ilable MAXIMUM RATINGS (TA = 25°C) Rat ing Collector −Emitter Voltage Collec tor −Base Voltage Emitter −Base Vol tage Collector Current − Continuous C ollector Current − Peak Symbol VCEO V CBO VEBO IC ICM Value −30 −50 −5. 0 −1.0 −2.0 Unit Vdc Vdc Vdc Adc A 30 VOLTS, 2.0 AMPS PNP TRANSISTORS COL LECTOR 3 1 BASE 2 EMITTER THERMAL CHAR ACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resi stance, Junction−to−Ambient (Note 1 ) Total Device Dissipation Alumina Subs trate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−t o−Ambient (Note 2) Total Device Dissi pation (Ref. Figure 8) (Single Pulse < 10 sec.) Junction and Storage Temperatu re Symbol PD 310 2.5 RqJA PD 710 5.7 RqJA PDsingle 575 TJ, Tstg −55 to +150 mW °C 176 mW mW/°C °C/W 40.
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