MMBT589LT1

www.DataSheet4U.com MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Value −30 −50 −5.0 −1.0 −2.0 Unit Vdc Vdc Vdc Adc A 30 VOLTS, 2.0 AMPS PNP TRANSISTORS COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Total Device Dissipation (Ref. Figure 8) (Single Pulse < 10 sec.) Junction and Storage Temperature Symbol PD 310 2.5 RqJA PD 710 5.7 RqJA PDsingle 575 TJ, Tstg −55 to +150 mW °C 176 mW mW/°C °C/W 403 mW mW/°C °C/W Max Unit 3 SOT−23 (TO−236) CASE 318 STYLE 6 1 2 MARKING DIAGRAM G3 M G G 1 G3 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recomm...