MMBT5962 Purpose Amplifier Datasheet

MMBT5962 Datasheet, PDF, Equivalent


Part Number

MMBT5962

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBT5962 Datasheet


MMBT5962
Discrete POWER & Signal
Technologies
2N5962
MMBT5962
C
C
BE
TO-92
SOT-23
Mark: 117
E
B
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
45
VEBO
Emitter-Base Voltage
8.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
100
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N5962
625
5.0
83.3
200
*MMBT5962
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT5962
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0
45
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
45 V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
8.0 V
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 65 °C
VEB = 5.0 V, IC = 0
2.0 nA
50 nA
1.0 nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 5.0 V, IC = 10 µA
VCE = 5.0 V, IC = 100 µA
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
IC = 10 mA, IB = 0.5 mA
VCE = 5.0 V, IC = 1.0 mA
450
500
550
600 1400
0.2
0.5 0.7
V
V
SMALL SIGNAL CHARACTERISTICS
Ccb Collector-Base Capacitance
Ceb Emitter-Base Capacitance
hfe Small-Signal Current Gain
NF Noise Figure
VCB = 5.0 V
4.0 pF
VEB = 0.5 V
6.0 pF
IC = 10 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
600 200
1.0
VCE = 5.0 V, IC = 10 µA,
RS = 10 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100 µA,
RS = 10 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 100 µA,
RS = 100 k, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 10 µA,
RS = 10 k, f = 10 Hz -10 kHz
BW = 15.7 kHz
3.0 dB
6.0 dB
4.0 dB
8.0 dB
3.0 dB
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%


Features 2N5962/ MMBT5962 Discrete POWER & Signa l Technologies 2N5962 MMBT5962 C E C BE TO-92 SOT-23 Mark: 117 B NPN Gen eral Purpose Amplifier This device is d esigned for use as low noise, high gain , general purpose amplifiers requiring collector currents to 50 mA. Sourced fr om Process 07. See 2N5088 for character istics. Absolute Maximum Ratings* Symb ol VCEO VCBO VEBO IC TJ, Tstg Collector -Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherw ise noted Parameter Value 45 45 8.0 1 00 -55 to +150 Units V V V mA °C Ope rating and Storage Junction Temperature Range *These ratings are limiting val ues above which the serviceability of a ny semiconductor device may be impaired . NOTES: 1) These ratings are based on a maximum junction temperature of 150 d egrees C. 2) These are steady state lim its. The factory should be consulted on applications involving pulsed or low d uty cycle operations. Thermal Characteristics Symbol PD RθJC RθJ.
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