MMBT6027

MMBT6027 Silicon programmable unijunction transistor (PUT′ s) in package SOT-23 0.5 max 3 2.55 max 1.4 max 1.9 3.1 max 1.2 max 1 2 Pinouts: 1- Anode, 2- Cathode, 3- Gate Ratings (T A = 25°C) Symbol VAK VGKF VGKR VGAR IT ITRM Parameter, units *Anode to cathode voltage, V *Gate to cathode forward voltage, V *Gate to cathode reverse voltage, V *Gate to anode reverse voltage, V *DC forward anode current, mA Repetitive peak forward current, A 100µs Pulse width, 1% duty cycle *20µs Pulse width, 1% duty cycle *Power dissipation, mW * - Anode positive, RGA =1000Ω ; Anode negative, RGA=open Limits ± 40 40 -5 40 150 1 2 300 PT Electrical Characteristics (T A = 25°C) Symbol IP IGAO IGKS VF VO VT IV tR Parameter, units, test conditions Peak current, µA, VS=10V, RG=10k Ω Gate to anode leakage current, nA, VS=40V, cathode open Gate to cathode leakage current, nA, VS=40V, anode to cathode shorted Forward voltage, V, IF=50mA Peak Peak output voltage, V, VG=20V, CC=0.2 µF Offset voltage, V VS=10V, RG=10k Ω Valley current, µA, VS=10V, RG=10k Ω Pulse voltage rise time, ns UB=20V, CC =0.2 µF min Limits typ 4 1 5 0.8 max 5 10 50 1.5 6 0.2 70 11 0.35 150 40 80 0.6 Planeta Electronic company JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: [email protected] http://www.planetasemi.com ...