MMBT6427 DARLINGTON TRANSISTOR Datasheet

MMBT6427 Datasheet, PDF, Equivalent


Part Number

MMBT6427

Description

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Manufacture

Diodes Incorporated

Total Page 3 Pages
Datasheet
Download MMBT6427 Datasheet


MMBT6427
MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 4)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking (See Page 3): K1D
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
A
C
BC
B TOP VIEW E
ED
G
H
K
J
C
L
BE
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCBO
VCEO
VEBO
IC
Value
40
40
12
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 2) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 2)@ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Symbol Min Max Unit
Test Condition
V(BR)CBO
40
V IC = 100μA, IE = 0
V(BR)CEO
40
V IC = 10mA, IB = 0
V(BR)EBO
12
V IE = 10μA, IC = 0
ICBO
50
nA VCB = 30V, IE = 0
ICEO
1.0
μA VCE = 25V, IB = 0
IEBO
50
nA VEB = 10V, IC = 0
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
10,000
20,000
14,000
100,000
200,000
140,000
1.2
1.5
2.0
1.75
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
V IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
V IC = 500mA, IB = 0.5mA
V IC = 50mA, VCE =5.0V
Cobo
Cibo
8.0 Typical
15 Typical
pF VCB = 10V, f = 1.0MHz, IE = 0
pF VEB = 0.5V, f = 1.0MHz, IC = 0
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30048 Rev. 9 - 2
1 of 3
www.diodes.com
MMBT6427
© Diodes Incorporated

MMBT6427
400
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs Ambient Temperature
1,000,000
100,000
10,000
1,000
100
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs Collector Current
1000
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
100
10
1
1 10 100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs Collector Current
DS30048 Rev. 9 - 2
2 of 3
www.diodes.com
MMBT6427
© Diodes Incorporated


Features MMBT6427 NPN SURFACE MOUNT DARLINGTON TR ANSISTOR Features • Epitaxial Plana r Die Construction • Ideal for Low Po wer Amplification and Switching • Hig h Current Gain • Lead, Halogen and An timony Free, RoHS Compliant "Green" Dev ice (Notes 1 and 4) Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic. UL Flammability Classificatio n Rating 94V-0 • Moisture Sensitivity : Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finis h annealed over Alloy 42 leadframe). Terminal Connections: See Diagram • Marking (See Page 3): K1D • Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) A C BC B TOP VIEW E ED G H K J C L BE M SOT-23 Dim Min Max A 0.37 0.51 B 1 .20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0 .10 K 0.903 1.10 L 0.45 0.61 M 0.085 0. 180 α 0° 8° All Dimensions in mm Ma ximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Co.
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