Darlington Transistor. MMBT6427 Datasheet


MMBT6427 Transistor. Datasheet pdf. Equivalent


Part Number

MMBT6427

Description

NPN Darlington Transistor

Manufacture

Fairchild

Total Page 2 Pages
Datasheet
Download MMBT6427 Datasheet


MMBT6427
Discrete POWER & Signal
Technologies
2N6427
MMBT6427
C
C
BE
TO-92
SOT-23
Mark: 1V
E
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
12
IC Collector Current - Continuous
1.2
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N6427
625
5.0
83.3
200
*MMBT6427
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT6427
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEO Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 25 V, IB = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
ON CHARACTERISTICS
hFE DC Current Gain*
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 500 mA, VCE = 5.0 V
IC = 50 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
IC = 50 mA, VCE = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
Cibo Input Capcitance
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 10 V, IE = 0,
f = 1.0 MHz
VBE = 1.0 V, IC = 0,
f = 1.0 MHz
40 V
40 V
12 V
1.0 µA
50 nA
50 nA
10,000
20,000
14,000
100,000
200,000
140,000
1.2
1.5
2.0
1.75
V
V
V
V
7.0 pF
15 pF


Features 2N6427 / MMBT6427 Discrete POWER & Sign al Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN D arlington Transistor This device is des igned for applications requiring extrem ely high current gain at collector curr ents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absol ute Maximum Ratings* Symbol VCEO VCBO V EBO IC TJ, Tstg Collector-Emitter Volta ge Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Par ameter Value 40 40 12 1.2 -55 to +150 Units V V V A °C Operating and Stora ge Junction Temperature Range *These r atings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) Thes e ratings are based on a maximum juncti on temperature of 150 degrees C. 2) The se are steady state limits. The factory should be consulted on applications in volving pulsed or low duty cycle operat ions. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unl.
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