TransistorNPN Silicon. MMBT6427LT1 Datasheet


MMBT6427LT1 Silicon. Datasheet pdf. Equivalent


MMBT6427LT1


Darlington Transistor(NPN Silicon)
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MMBT6427LT1
Preferred Device

Darlington Transistor
NPN Silicon
Features

• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc

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COLLECTOR 3 BASE 1

EMITTER 2

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W SOT−23 (TO−236) CASE 318 STYLE 6 Max Unit 1 2 3

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1V M G G 1

1V = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or o...



MMBT6427LT1
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MMBT6427LT1
Preferred Device
Darlington Transistor
NPN Silicon
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
40 Vdc
12 Vdc
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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COLLECTOR 3
BASE
1
EMITTER 2
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
1V M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1V = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT6427LT1 SOT−23 3,000 / Tape & Reel
MMBT6427LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBT6427LT1/D

MMBT6427LT1
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IC = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc)
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
Base −Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Current Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
hFE
VCE(sat)(3)
VBE(sat)
VBE(on)
Cobo
Cibo
|hfe|
NF
Min Max Unit
Vdc
40 −
Vdc
40 −
Vdc
12 −
mAdc
− 1.0
nAdc
− 50
nAdc
− 50
10,000
20,000
14,000
100,000
200,000
140,000
1.2
1.5
2.0
1.75
Vdc
Vdc
Vdc
pF
− 7.0
pF
− 15
Vdc
1.3 −
dB
− 10
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2




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