MMBT6429LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6428LT1/D Amplifier Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT6428LT1 MMBT6429LT1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 6428LT1 50 60 6.0 200 2 EMITTER 1 3 6429LT1 45 55 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT6428 MMBT6429 V(BR)CBO MMBT6428 MMBT6429 ICES — ICBO — IEBO — 0.01 0.01 µAdc 0.1 µAdc 60 55 — — µAdc 50 45 — — Vdc Vdc   0.06...