Amplifier Transistors. MMBT6429LT1 Datasheet


MMBT6429LT1 Transistors. Datasheet pdf. Equivalent


Part Number

MMBT6429LT1

Description

Amplifier Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBT6429LT1 Datasheet


MMBT6429LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6428LT1/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
MMBT6428LT1
MMBT6429LT1
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol 6428LT1 6429LT1 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
50 45
60 55
6.0
200
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
(IC = 0.1 mAdc, IE = 0)
Collector Cutoff Current
(VCE = 30 Vdc)
MMBT6428
MMBT6429
MMBT6428
MMBT6429
V(BR)CEO
V(BR)CBO
ICES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
50 —
45 —
Vdc
60 —
55 —
µAdc
— 0.1
µAdc
— 0.01
µAdc
— 0.01
Thermal Clad is a trademark of the Bergquist Company.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT6429LT1
MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
Symbol
hFE
(IC = 0.1 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT6428
MMBT6429
(IC = 10 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT6428
MMBT6429
VCE(sat)
VBE(on)
fT
Cobo
Cibo
Min
250
500
250
500
250
500
250
500
0.56
100
Max
650
1250
0.2
0.6
0.66
700
3.0
8.0
Unit
Vdc
Vdc
MHz
pF
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6428LT1/D A mplifier Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT6428LT1 MMBT6429LT1 MAXIMUM RATINGS Rating Collector – E mitter Voltage Collector – Base Volta ge Emitter – Base Voltage Collector C urrent — Continuous Symbol VCEO VCBO VEBO IC 6428LT1 50 60 6.0 200 2 EMITTE R 1 3 6429LT1 45 55 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT 23 (TO – 236AB) THERMAL CHARACTER ISTICS Characteristic Total Device Diss ipation FR– 5 Board(1) TA = 25°C Der ate above 25°C Thermal Resistance, Jun ction to Ambient Total Device Dissipati on Alumina Substrate,(2) TA = 25°C Der ate above 25°C Thermal Resistance, Jun ction to Ambient Junction and Storage T emperature Symbol PD Max 225 1.8 RqJA P D 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L ELECTRICAL CHAR ACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHA.
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