MMBT6515 Purpose Amplifier Datasheet

MMBT6515 Datasheet, PDF, Equivalent


Part Number

MMBT6515

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBT6515 Datasheet


MMBT6515
MPS6515/MMBT6515
NPN General Purpose Amplifier
• This device is designed as a general purpose
amplifier and switch.
• The useful dynamic range extends to 100mA as a
switch and to 100MHz as an amplifier.
3
1 TO-92
1. Emitter 2. Base 3. Collector
2
SOT-23
1 Mark: 3J
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings* TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector current
- Continuous
TJ, Tstg
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
40
4.0
200
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
ICBO
Collector Cutoff Current
On Characteristics *
IC = 0.5mA, IB = 0
IC =10µA, IE = 0
IC = 10µA, IC = 0
VCE = 30V, IE = 0
VCB = 30V, IE = 0, T = 60°C
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
Small Signal Characteristics
IC = 2.0mA, VCE = 10V
IC = 100mA, VCE = 10V
IC = 50mA, IB = 5.0mA
Cobo
Output Capacitance
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VCB = 10V, IE = 0, f = 100kHz
Min. Max. Units
25 V
40 V
4.0 V
50 nA
1.0 µA
250 500
150
0.5
V
3.5 pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 0.06"
Max.
MPS6515
*MMBT6515
625 350
5.0 2.8
83.3
200 357
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A. February 2003

MMBT6515
Package Dimensions
TO-92
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A. February 2003


Features MPS6515/MMBT6515 MPS6515/MMBT6515 NPN G eneral Purpose Amplifier • This devic e is designed as a general purpose ampl ifier and switch. • The useful dynami c range extends to 100mA as a switch an d to 100MHz as an amplifier. 1 1. Emitt er 2. Base 3. Collector TO-92 3 2 SOT-2 3 1 Mark: 3J 1. Base 2. Emitter 3. Coll ector Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol VCEO V CBO VEBO IC TJ, Tstg Parameter Collecto r-Emitter Voltage Collector-Base Voltag e Emitter-Base Voltage Collector curren t Junction and Storage Temperature - Co ntinuous Value 25 40 4.0 200 -55 ~ +150 Units V V V mA °C * These ratings ar e limiting values above which the servi ceability of any semiconductor device m ay be impaired. NOTES: 1) These ratings are based on a maximum junction temper ature of 150 degrees C. 2) These are st eady state limits. The factory should b e consulted on applications involving p ulsed or low duty cycle operations Ele ctrical Characteristics TC=25°C unless otherwise noted Symbol Paramet.
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