MMBT8099LT1 Amplifier Transistor Datasheet

MMBT8099LT1 Datasheet, PDF, Equivalent


Part Number

MMBT8099LT1

Description

Amplifier Transistor

Manufacture

ON

Total Page 8 Pages
Datasheet
Download MMBT8099LT1 Datasheet


MMBT8099LT1
MMBT8099LT1
Preferred Device
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.) TA = 25°C
Derate above 25°C
PD
Thermal Resistance –
Junction-to-Ambient (Note 1.)
RθJA
Total Device Dissipation Alumina
Substrate (Note 2.) TA = 25°C
Derate above 25°C
PD
Thermal Resistance –
Junction-to-Ambient (Note 2.)
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Value
80
80
6.0
500
Max
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT–23
CASE 318
STYLE 6
MARKING DIAGRAM
KB M
KB = Specific Device Marking
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT8099LT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0
1
Publication Order Number:
MMBT8099LT1/D

MMBT8099LT1
MMBT8099LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 3.)
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3.)
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TURN-ON TIME
-1.0 V
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
80
80
6.0
hFE
VCE(sat)
VBE(on)
100
100
75
0.6
fT
Cobo
Cibo
150
Max Unit
Vdc
Vdc
– Vdc
0.1 µAdc
µAdc
0.1
µAdc
0.1
300
Vdc
0.4
0.3
Vdc
0.8
– MHz
pF
6.0
pF
25
TURN-OFF TIME
+VBB
VCC
+40 V
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
2


Features MMBT8099LT1 Preferred Device Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collec tor-Base Voltage Emitter-Base Voltage C ollector Current – Continuous Symbol VCEO VCBO VEBO IC Value 80 80 6.0 500 U nit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER C OLLECTOR 3 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Total De vice Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Not e 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate a bove 25°C Thermal Resistance – Junct ion-to-Ambient (Note 2.) Junction and S torage Temperature Range Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C C/W 3 mW mW/°C °C/W °C 1 2 SOT–2 3 CASE 318 STYLE 6 1. FR–5 = 1.0 X 0 .75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. MARKING DIA GRAM KB M KB = Specific Device Markin g M = Date Code ORDERING INFORMATION Device MMBT8099LT1 Package SOT–23 Shipping 3000/Ta.
Keywords MMBT8099LT1, datasheet, pdf, ON, Amplifier, Transistor, MBT8099LT1, BT8099LT1, T8099LT1, MMBT8099LT, MMBT8099L, MMBT8099, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)