MMBT8099LT1
Preferred Device
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collecto...
MMBT8099LT1
Preferred Device
Amplifier
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value 80 80 6.0 500 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3
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THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 2.) Junction and Storage Temperature Range Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W
3 mW mW/°C °C/W °C 1 2 SOT–23 CASE 318 STYLE 6
1. FR–5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
MARKING DIAGRAM
KB M
KB = Specific Device Marking M = Date Code
ORDERING INFORMATION
Device MMBT8099LT1 Package SOT–23 Shipping 3000/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
January, 2001 – Rev. 0
Publication Order Number: MMBT8099LT1/D
MMBT8099LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 3.) (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (I...